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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220 package www..com *Low collector saturation voltage *Wide ASO(safe operating area) *Complement to type 2SB825 APPLICATIONS *Universal high current switching as solenoid driving, *High speed inverter and converter. relay drivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1061 Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 60 50 6 7 12 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE== IC=1mA ;IE=0 IE=1mA ;IC=0 IC=4A, IB=0.4A VCB=40V;IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=5A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 50 60 6 www..com 2SD1061 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V V 0.4 0.1 0.1 280 V mA mA 10 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=2A IB1=- IB2=0.2A VCC=20V;RL=10D 0.2 0.9 0.3 s s s hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com 2SD1061 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1061 www..com 4 |
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