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Schottky Diode Array
ASDN010
Schottky Diode Array
Description
ASDN010
Features
* * * * *
Provides protection regardless of card loading conditions Fast turn on and reverse revovery characteristics 24 pin QSOP package has a small footprint, saving valuable board space 18 channel, dual rail clamping capacity Ideal for applications that require noise immunity and low power consumption
Top view
The ASDN010 is a Schottky Diode Memory Bus Terminator designed to eliminate overshoot and undershoot problems caused by reflections on high speed lines, while maintaining noise immunity and minimizing any losses in power consumption. The ASDN010 is an ideal terminator for applications such as SDRAM bus lines, or v2.1 66MHz PCI busses. The ASDN010 supports up to 18 terminated lines. Each line can be simultaneously clamped to both ground and power supply rails, allowing effective termination under a wide variety of loading conditions.
Pin Configuration --
QSOP (MWP)
GROUND SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY GROUND SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY VDD
VDD SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY VDD SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY GROUND
Ordering Information
Package Temperature Range Order Code
14-Pin QSOP
0 to 70 C
ASDN010MWP
ASTEC Semiconductor (c) ASTEC Semiconductor
1
ASDN010
Functional Block Diagram
VDD 24 23 22 21 20 VDD 19 18 17
Schotkey Diode Array
GND 13
16
15
14
1 GND
2
3
4
5
6 GND
7
8
9
10
11
12 VDD
Absolute Maximum Ratings
Parameter Symbol Rating Units
Supply Voltage Channel clamp current (continuous) Operating Temperature Package Power Rating (QSOP @ 70C) Junction Temperature Storage Temperature Lead Temperature, Soldering 10 Seconds
VDD ICLAMP
-0.3 to +7.0 50 0 to 70 1.00 (max.)
V mA C W C C C
TJ TSTG TL
150 - 65 to 150 300
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended Conditions
Parameter Symbol Rating Unit
Typical Thermal Resistances
Package JA JC Typical Derating
Voltage Current
VVDD IVDD
20 10
V mA
24L-QSOP 110 C/W
8 C/W
9.1 mW/C
ASTEC Semiconductor
2
Schottky Diode Array
Electrical Characteristics
ASDN010
Electrical Characteristics are guaranteed over full junction temperature range (0 to 70 C). Ambient temperature must be derated based on power dissipation and package thermal characteristics. The conditions are: VVDD = 20V and IVDD = 10 mA unless otherwise stated. Parameter Diode Forward Voltage Max. Bus Speed (see note 1) Channel leakage Input Capacitance ESD Protection ICL Symbol VF Test Condition IF = 16 mA IF = 50 mA ZO = 50, Logic Swing 0.4V to 3.0V 0 VIN VDD f = 1 MHz, V IN = 2.5V, TA = 25C, VDD = 5V MIL-STD-883, Method 3015 2 Min Typ 0.65 0.80 125 0.1 5 5.0 Max 0.85 1.00 Unit V V MHz A pF KV
Note 1: The presence of a Schottky diode for clamping bus overshoots will cause additional delays of signal edges. These delays are the result of diode characteristics such as forward voltage, diode capacitance and the reverse recovery phenomenon. The ground clamp diode is most critical, particularly if VLSI circuits such as static or dynamic memories are directly connected to busses without any buffer stages. The incremental delay observed on a positive edge following a negative transition that forward biased the Schottky diode is less than 800 pS. That represents less than 10% of the 125 MHz (8 nS period) bus cycle time.
Typical Performance Curves
None available at time of printing
ASTEC Semiconductor
3

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