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| STW20NM50 N-CHANNEL 500V - 0.20 - 20A TO-247 MDmeshTMPower MOSFET TYPE STW20NM50 www..com n TYPICAL n n n n n VDSS 500V RDS(on) < 0.25 ID 20 A RDS(on) = 0.20 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS 3 2 1 TO-247 DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 30 20 12.6 80 214 1.44 15 -65 to 150 150 (1) ISD 20A, di/dt 400A/s, VDD V (BR)DSS, T j TJMAX. Unit V V V A A A W W/C V/ns C C (*)Pulse width limited by safe operating area August 2002 1/8 STW20NM50 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.585 30 300 C/W C/W C Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = 5 A, VDD = 35 V) Max Value 10 650 Unit A mJ www..com ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30V Min. 500 1 100 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 10A Min. 3 Typ. 4 0.20 Max. 5 0.25 Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (2) RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance VGS = 0V, VDS = 0V to 400V f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 10 1480 285 34 130 1.6 Max. Unit S pF pF pF pF 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2/8 STW20NM50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd www..com Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 250V, ID = 10 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 400 V, ID = 20 A, VGS = 10 V Min. Typ. 24 16 40 13 19 Max. Unit ns ns 56 nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400 V, ID = 20 A, RG = 4.7, VGS = 10 V (see test circuit, Figure 5) Min. Typ. 9 8.5 23 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr Irrm trr Qrr Irrm Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, VGS = 0 ISD = 20 A, di/dt = 100 A/s, VDD = 100 V, Tj = 25C (see test circuit, Figure 5) ISD = 20 A, di/dt = 100 A/s, VDD = 100 V, Tj = 150C (see test circuit, Figure 5) 350 4.6 26 435 5.9 27 Test Conditions Min. Typ. Max. 20 80 1.5 Unit A A V ns C A ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STW20NM50 Output Characteristics Transfer Characteristics www..com Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STW20NM50 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature www..com Source-drain Diode Forward Characteristics 5/8 STW20NM50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform www..com Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW20NM50 TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 0.40 1 3 2 2 3 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 2 5 60 3.55 3.65 0.14 3 0.07 5 60 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 TYP MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05 DIM. A D E www..com F F1 F2 F3 F4 G H L L1 L2 L3 L4 L5 M V V2 Dia 7/8 STW20NM50 www..com Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 8/8 |
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