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| Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT10000/3 20 AMP NPN DARLINGTON TRANSISTOR 350 VOLTS Features: BVCEO 350 Volts Low Saturation Voltage 200oC Operating Temperature Hermetically Sealed, Isolated Package TX, TXV, S-Level Screening Available. Consult Factory. Application Notes: SFT10000 Darlington Transistor is a direct replacement of Motorola MJ1000. It is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: Switching Regulators Inverters Solenoid and Relay Drives Motor Controls Deflection Circuits DESIGNER'S DATA SHEET Part Number / Ordering Information 1/ SFT10000 __ __ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package /3 = TO-3 Maximum Ratings Collector - Emitter Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Base Current Total Power Dissipation Derate above 50C Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) NOTES: 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. Symbol VCEO VCEV VEB Continuous Peak @ TC = 25C @ TC = 100C IC ICM IB PD TJ & TSTG R0JC Value 350 450 8 20 30 2.5 175 100 1 -65 to +200 1 Units Volts Volts Volts Amps Amps Watts Watts W/C C C/W TO-3(/3) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0011B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT10000/3 Symbol VCEO(sus) IC = 2A IC = 10A TC = 25C TC = 100C VCEX(sus) ICBO ICEV IEBO IC = 5A IC = 10A IC = 10A, IB = 400mA, TC = 25C IC = 20A, IB = 1A, TC = 25C IC = 10A, IB = 400mA, TC = 100C TC = 25C TC = 100C HFE VCE (SAT) VBE (SAT) VF HFE Cob t(on) t(off) tsv tc td tr ts tf Min 80 400 275 -- -- -- -- 50 40 -- -- -- -- -- -- 10 100 -- -- -- -- -- -- Max -- -- -- 0.25 5.0 5 150 600 400 1.9 3.0 2.0 2.5 2.5 5.0 -- 325 0.2 0.6 3.5 2.4 5.5 3.7 pF s s s s s s Volts Volts Volts Units Volts Volts mA mA mA Electrical Characteristics Collector - Emitter Sustaining Voltage (IC = 250 mA, IB = 0, VCLAMP = Rated VCEO) Collector - Emitter Sustaining Voltage (VCLAMP = Rated VCEX, TC = 100C) Collector Cutoff Current (VCE = Rated Value, VBE(off) = 1.5V) Collector Cutoff Current (VCEV = Rated VCEV, RBE = 50, TC = 100C ) Emitter Cutoff Current (VEB = 8V, IC = 0) DC Current Gain* (VCE = 5V) Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage* (IC = 10A, IB = 400mA) Diode Forward Voltage (IF = 10A) Small Signal Current Gain (IC = 1A, VCE = 10V, f = 1MHz) Output Capacitance (VCB = 30V, IE = 0A, f = 2.0MHz) Delay Time Rise Time Storage Time Fall Time Storage Time Crossover Time NOTES: * Pulse Test: Pulse Width = 300sec, Duty Cycle = 2% CASE OUTLINE: TO-3 Pin Out: Case - Collector 1 - Base 2 - Emitter VCC = 250V, IC = 10A, IB1 = IB2 = 400 mA, VBE (off) = 5V, tp = 50s, Duty Cycle 2% IC = 10A(pk), VCLAMP = Rated VCEX, IB1 = 400 mA, VBE (off) = 5V, TC = 100C NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0011B DOC |
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