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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB 60N80P
VDSS = 800 V ID25 = 60 A RDS(on) 140 m trr 250 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight
Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 2 TC = 25 C
Maximum Ratings 800 800 30 40 60 150 30 100 5 20 1250 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C C N/lb g
PLUS264TM (IXFB)
G
(TAB) D S
G = Gate S = Source
D = Drain TAB = Drain
Features
l l l
l
International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting force
300 260 30..120/7.5...2.7 10
Advantages
l l l
Plus 264TM package for clip or spring Space savings High power density
Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125 C
Characteristic Values Min. Typ. Max. 800 3.0 5.0 200 25 3000 140 V V nA A A m
VGS = 10 V, ID = 0.5 ID25, Note 1
(c) 2006 IXYS All rights reserved
DS99560E(02/06)
IXFB 60N80P
Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 35 67 18 VGS = 0 V, VDS = 25 V, f = 1 MHz 1200 44 36 VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 RG = 1 (External) 29 110 26 250 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 90 78 S nF pF pF ns ns ns ns nC nC nC 0.10 C/W 0.13 C/W PLUS264TM (IXFB) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS = 20 V; ID = 0.5 ID25, Note 1
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Notes: Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 25A, -di/dt = 100 A/s VR = 100V
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 60 150 1.5 250 0.6 6.0 A A V ns C A
1. Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXFB 60N80P
Fig. 1. Output Characteristics @ 25C
60 55 50 45 V GS = 10V 7V 100 120 V GS = 10V 7V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 5V 6V
I D - Amperes
40
80
60 6V 40
20 5V 0 0 3 6 9 12 15 18 21 24 27 30
V DS - Volts
V DS - Volts
Fig. 3. Output Characteristics @ 125C
60 55 50 45 V GS = 10V 7V 3.2
Fig. 4. R DS(on) Normalized to ID = 30A Value v s. Junction Temperature
V GS = 10V 2.8
R DS(on) - Normalized
2.4 2 1.6 1.2 0.8 0.4
I D - Amperes
40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12
6V
I D = 60A I D = 30A
5V
14
16
18
20
-50
-25
0
25
50
75
100
125
150
V DS - Volts
T J - Degrees Centigrade
Fig. 5. R DS(on) Normalized to ID = 30A Value vs. Drain Current
2.8 2.6 2.4 V GS = 10V TJ = 125C 70 60 50
Fig. 6. Maximum Drain Current v s. Case Temperature
R DS(on) - Normalized
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 20 40 60 80 100 120 TJ = 25C
I D - Amperes
40 30 20 10 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
T J - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFB 60N80P
Fig. 7. Input Admittance
80 70 60 50 40 30 20 10 0 4 4.25 4.5 4.75 5 5.25 5.5 5.75 6 6.25 6.5 6.75 130 120 110 100 TJ = 125C 25C - 40C
Fig. 8. Transconductance
g f s - Siemens
90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 TJ = - 40C 25C 125C
I D - Amperes
V GS - Volts
I D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
180 160 140 120 10 9 8 7 V DS = 400V I D = 30A I G = 10mA
Fig. 10. Gate Charge
I S - Amperes
V GS - Volts
TJ = 125C TJ = 25C
100 80 60 40 20 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200 220 240 260
V SD - Volts
Q G - NanoCoulombs
Fig. 11. Capacitance
100,000 f = 1 MHz 1.000
Fig. 12. Maximum Transient Thermal Resistance
Capacitance - PicoFarads
10,000
C iss
1,000 C oss
R (th)JC - C / W
0.100
0.010
100
C rss 10 0 5 10 15 20 25 30 35 40 0.001 0.0001 0.001 0.01 0.1 1 10
V DS - Volts
Pulse W idth - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.

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