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www..com (R) STPS10150CT/CG HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj VF (max) 2x5A 150 V 175C 0.75 V K A2 K FEATURES AND BENEFITS s s s s HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE CAPABILITY SPECIFIED A2 A1 A2 K A1 D2PAK STPS10150CG TO-220AB STPS10150CT DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current TO-220AB = 0.5 D2PAK Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage Tc = 155C per diode per device Value 150 10 5 10 120 3100 - 65 to + 175 175 10000 Unit V A A A W C C V/s tp = 10 ms sinusoidal tp = 1s Tj = 25C July 2003 - Ed: 5B 1/5 STPS10150CT/CG THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter TO-220AB / D PAK TO-220AB / D PAK TO-220AB / D PAK 2 2 2 Value Per diode Total Coupling 4 2.4 0.7 Unit C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% Min. Typ. 0.40 Max. 2.0 2.0 0.92 0.75 1 0.85 Unit A mA V VR = VRRM IF = 5 A IF = 5 A IF = 10 A IF = 10 A 0.79 0.69 To evaluate the conduction losses use the following equation: P = 0.65 IF(AV) + 0.02 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 5.0 = 0.2 = 0.5 = 0.1 4.5 4.0 = 0.05 3.5 =1 3.0 2.5 2.0 1.5 T 1.0 0.5 IF(av) (A) tp =tp/T 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Fig. 2: Average forward current versus ambient temperature ( = 0.5, per diode). IF(av)(A) 6 Rth(j-a)=Rth(j-c) 5 4 3 2 1 0 =tp/T tp T Rth(j-a)=15C/W Tamb(C) 50 75 100 125 150 175 0 25 2/5 STPS10150CT/CG Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 80 70 60 50 40 30 20 10 0 1E-3 IM t Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=50C 0.6 0.4 0.2 = 0.5 Tc=75C = 0.2 = 0.1 Tc=125C T =0.5 t(s) 1E-2 1E-1 1E+0 Single pulse tp(s) 1E-2 1E-1 0.0 1E-3 =tp/T tp 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode) IR(A) 1E+5 1E+4 1E+3 1E+2 1E+1 1E+0 1E-1 1E-2 VR(V) 0 25 50 75 100 125 150 Tj=75C Tj=175C Tj=150C Tj=125C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 200 100 50 F=1MHz Tj=25C Tj=25C 20 VR(V) 10 1 2 5 10 20 50 100 200 3/5 STPS10150CT/CG Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35m) (STPS10150CG only). Rth(j-a) (C/W) 80 Tj=125C Typical values IFM(A) 100.0 70 60 50 Tj=25C 10.0 Tj=125C 40 30 20 10 0 0 2 4 6 8 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 S(cm) 10 12 14 16 18 20 PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 13 2.65 15.25 6.20 3.50 3.75 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 14 2.95 15.75 6.60 3.93 3.85 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 0.551 0.116 0.620 0.259 0.154 0.151 C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 0.645 typ. 2.6 typ. 0.102 typ. 4/5 STPS10150CT/CG PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E L2 C2 REF. A A1 A2 B B2 C C2 D E G L L2 L3 R V2 Millimeters Min. Typ. Max. Min. Inches Typ. Max. D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R 4.30 4.60 0.169 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.25 1.40 0.049 0.055 0.45 0.60 0.017 0.024 1.21 1.36 0.047 0.054 8.95 9.35 0.352 0.368 10.00 10.28 0.393 0.405 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 0.40 0.016 0 8 0 8 FOOT PRINT DIMENSIONS (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 Ordering type STPS10150CT STPS10150CG STPS10150CG-TR s Marking STPS10150CT STPS10150CG STPS10150CG Package TO-220AB D2PAK D2PAK Weight 2.2 g 1.48 g 1.48 g Base qty 50 50 1000 Delivery mode Tube Tube Tape & reel EPOXY MEETS UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. 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