View ST083S04PFM0_32562.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Bulletin I25185 rev. C 03/03
ST083S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
Center amplifying gate High surge current capability Low thermal impedance High speed performance
85A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM /V RRM tq range (see table) TJ
ST083S
85 85 135 2450 2560 30 27 400 to 1200 10 to 20 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AC (TO-94)
www.irf.com
1
ST083S Series
Bulletin I25185 rev. C 03/03
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 08 ST083S 10 12
V DRM /V RRM, maximum repetitive peak voltage V
400 800 1000 1200
VRSM , maximum non-repetitive peak voltage V
500 900 1100 1300
I DRM/I RRM max.
@ TJ = TJ max.
mA
30
Current Carrying Capability
Frequency
180 el 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 210 200 150 70 50 V DRM 50 60
o
ITM 180 el 120 120 80 25 50 50 85 330 350 320 220 50 V DRM 60
o
ITM 100s 270 210 190 85 50 85 2540 1190 630 250 50 V DRM 60
ITM
Units
1930 810 400 100 50 85 V A/s C A
22 / 0.15F
22 / 0.15F
22 / 0.15F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST083S
85 85 135 2450 2560 2060 2160
Units Conditions
A C DC @ 77C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max 180 conduction, half sine wave
I 2t
Maximum I2t for fusing
30 27 21 19
I 2t
Maximum I2t for fusing
300
t = 0.1 to 10ms, no voltage reapplied
2
www.irf.com
ST083S Series
Bulletin I25185 rev. C 03/03
On-state Conduction
Parameter
V TM Max. peak on-state voltage
ST083S
2.15 1.46 1.52 2.32
Units
Conditions
ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max.
m 2.34 600 1000 mA
T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time
ST083S
1000 0.80 Min 10 Max 20
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 100A, commutating di/dt = 10A/s VR = 50V, tp = 200s, dv/dt = 200V/s
s
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST083S
500 30
Units
V/s mA
Conditions
TJ = TJ max., linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST083S
40 5 5 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
TJ = TJ max, tp 5ms
TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
www.irf.com
3
ST083S Series
Bulletin I25185 rev. C 03/03
Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC RthCS T Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
ST083S
-40 to 125 -40 to 150 0.195 0.08 15.5 (137) 14 (120)
Units
C
Conditions
DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Lubricated threads Mounting surface, smooth, flat and greased
wt
Approximate weight Case style
130
TO-209AC (TO-94)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.034 0.041 0.052 0.076 0.126 0.025 0.042 0.056 0.079 0.127 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 2 3 4 5 6 7 8 9 - Thyristor - Essential part number - 3 = Fast turn off
08
2
3
3
S
4
12
5
P
6
F
7
N
8
0
9
- S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - P = Stud Base 1/2"-20UNF-2A threads - Reapplied dv/dt code (for tq Test Condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads)
tq(s) up to 800V tq(s) only for 1000/1200V
dv/dt - tq combinations available
dv/dt (V/s) 10 20 20 200 FN FK FK
4
www.irf.com
ST083S Series
Bulletin I25185 rev. C 03/03
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX.
37 )M IN (0 . 9 .5
8.5 (0.33) DIA. 4.3 (0.17) DIA
2.6 (0.10) MAX.
RED SILICON RUBBER 157 (6.18) 170 (6.69) RED CATHODE
C.S. 0.4 mm 2 (.0006 s.i.)
C.S. 16mm 2 (.025 s.i.)
20
(0 .
FLEXIBLE LEAD
79 )M
IN .
.
Fast-on Terminals
WHITE GATE
AMP. 280000-1 REF-250
10 (0.39)
215 (8.46) 70 (2.75) MIN. RED SHRINK 29 (1.14) MAX. WHITE SHRINK
22.5 (0.88) MAX. DIA. 12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX.
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
Maximum Allowable Case T emperature (C)
130 S 083SS T eries RthJC (DC) = 0.195 K/ W 120
Maximum Allowable Case T emperature (C)
130 120 110
S 083S S T eries RthJC (DC) = 0.195 K/ W
110
Conduc tion Angle
Conduction Period
100 90 30 80 70 0 20 40 60 80 100 120 140 Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
100
90
30
60
60
90 120 180 DC
90
120
180
80 0 10 20 30 40 50 60 70 80 90 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
www.irf.com
5
ST083S Series
Bulletin I25185 rev. C 03/03
Maximum Average On-s tate Power Loss (W)
180
A hS Rt
2 0.
160 140
120 100 80 60
40 20 0
180 120 90 60 30 RMS Limit
W K/
3 0.
K/ W
W K/ .1 =0
0. 4
W K/
0. 5
K/ W
elt -D a R
0.8 K/ W
Conduc tion Angle
1.2 K/ W
S 083S S T eries T = 125C J 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125
Average On-state Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-state Power Loss(W)
250 DC 180 120 90 60 30
R
SA th
200
0. 2
= 1 0. W K/
K/ W
150
K/ W 0.4 K/ 0.5 W K/ W
0. 3
ta el -D R
100 RMS Limit
Conduction Period
0.8 K/ W
1.2 K/
W
50
S 083S S T eries T = 125C J
0
0 20 40 60 80 100 120 140 25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 4 - On-state Power Loss Characteristics
Peak Half S Wave On-state Current (A) ine
Peak Half S Wave On-s ine tate Current (A)
2200 2000 1800 1600 1400 1200 1000 1
At Any Rated Load Condition And With R ated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s
2600 2400
Maximum Non R epetitive S urge Current Vers Pulse T us rain Duration. Control Of Conduction May Not Be Maintained. Initial T = 125C J 2200 No Voltage Reapplied R ated VRRM Reapplied 2000 1800 1600 1400 1200 S 083SS T eries
S 083SS T eries
10
100
1000 0.01
0.1 Pulse Train Duration (s)
1
Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
6
www.irf.com
ST083S Series
Bulletin I25185 rev. C 03/03
T rans ient T hermal Impedance Z thJC (K/ W)
10000 Instantaneous On-state Current (A)
1 S teady S tate Value RthJC = 0.195 K/ W (DC Operation)
T = 25C J 1000 T = 125C J
0.1
S 083S S T eries
S 083S S T eries
100 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
0.01 0.001
0.01
0.1
1
10
S quare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Maximum R everse R ecovery Charge - Qrr (C)
Maximum Reverse R overy Current - Irr (A) ec
160 140 120
200 A
120 110 100 90 80 70 60 50 40 30 20 10 10 20 30 40 50
S 083SS T eries T = 125 C J
IT = 500 A M 300 A
I T = 500 A M 300 A 200 A 100 A 50 A
100
100 A
80 60
50 A
40 20 10
S 083SS T eries T = 125 C J
20 30 40 50
60
70
80
90 100
60 70 80 90 100
R ate Of Fall Of On-state Current - di/ dt (A/ s)
Fig. 9 - Reverse Recovered Charge Characteristics
Rate Of Fall Of Forward Current - di/ dt (A/ s)
Fig. 10 - Reverse Recovery Current Characteristics
1E4
S nub ber circuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM
S nubb er circ uit Rs = 22 ohms Cs = 0.15 F V D = 80% VDRM
Peak On-s tate Current (A)
1E3
1500 1000 500 400 200 2000 2500 3000 100 50 Hz
1500 2000 2500 S 083SS T eries S inusoidal pulse T = 85C C 1000 500 400 200 100 50 Hz
1E2
S 083SS T eries S inusoida l p ulse T = 60C C
3000 tp
tp
1E1 1E1
1E2
1E3
1E 1E1 1 4 1E4 1E
1E2
1E3
1E4
Puls Basewidth (s) e
Fig. 11 - Frequency Characteristics
Pulse Basewidth (s)
www.irf.com
7
ST083S Series
Bulletin I25185 rev. C 03/03
1E4
S nub ber c ircuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM
Peak On-stat e Current (A)
tp
S 083SS T eries T ezoid al p ulse rap T = 85C C d i/dt = 50A/ s
S nub ber c ircuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM
1E3
50 Hz 200 100 500 400
1000 1500
1E2
3000
2000 2500
1500
1000
500
400
200
100
50 Hz
tp
S 083SS T eries T ezoid al p ulse rap T = 60C C di/ dt = 50A/ s
2000 2500
1E1 1E 1
1E2
1E3
1E4 1E 1E1 41E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
Pulse Basewidth (s)
1E 4
S nubb er circ uit Rs = 22 ohms Cs = 0.15 F V D = 80% VDRM
S 083SS T eries T rapezoidal pulse T = 85C C di/ dt = 100A/ s S nub ber c ircuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM
Peak On-st ate Current (A)
tp
1E 3
400 200 100 50 Hz
500 1000 1500 2000 2500 400 200 100 50 Hz
1000
500
1E 2
1500 2000 2500 3000 tp S 083SS T eries T pezoidal pulse ra T = 60C C di/ dt = 100A/ s
1E 1 1E1
1E2
1E3
1E4 1E 1E 1E1 1 4
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
Pulse Basewidth (s)
1E4
20 joules per pulse
S 083SS T eries Rectangula r pulse tp di/ dt = 50A/ s 20 joules p er pulse 7.5
Peak On-state Current (A)
1E3
0.3 0.2
0.5
1
2
3
5
10
2 1 0.5 0.3 0.2 0.1
4
0.1
1E2
S 083SS T eries S inusoida l p ulse tp
1E1 1E1
1E 2
1E3
1E4 4 1E1 1E1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
8
www.irf.com
ST083S Series
Bulletin I25185 rev. C 03/03
100 Instantaneous Gate Voltage (V) R ectangular gate pulse a) Rec ommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) R ecommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b)
T j=-40 C T j=25 C T j=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a )
tp tp tp tp
= 20ms = 10ms = 5ms = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: S 083S S T eries 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03 /03
www.irf.com
9

▲Up To Search▲

Price & Availability of ST083S04PFM0

	To Download ST083S04PFM0 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .