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| DC COMPONENTS CO., LTD. R DMBT9018 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 20 15 4 50 225 +150 -55 to +150 Unit V V V mA mW o o .026(0.65) .010(0.25) .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) .051(1.30) .035(0.90) .0043(0.11) .0035(0.09) C .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) Electrical oCharacteristics Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain (1) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min 20 15 4 28 600 2% Typ - Max 0.1 0.1 0.5 400 - Unit V V V A A V MHz Test Conditions IC=100A IC=1mA IE=100A VCB=12V VEB=3V IC=5mA, IB=0.5mA IC=1mA, VCE=5V IC=5mA, VCE=5V VCE(sat) hFE Transition Frequency (1)Pulse Test: Pulse Width fT 380s, Duty Cycle |
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