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MA4AGBLP912
AlGaAs Beamlead PIN Diode
Features

V3 MA4AGBLP912
Low Series Resistance Low Capacitance Millimeter Wave Switching Millimeter Wave Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant
Topside
Description
M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech's patent pending hetero-junction technology, produce less diode "On" resistance than a conventional GaAs device. This device is fabricated on a OMCVD epitaxial wafer using a process optimized for high device uniformity and extremely low parasitics. The diode exhibits low series resistance, 4, low capacitance, 28fF, and an extremely fast switching speed of 5nS. It is fully passivated with silicon nitride and has an additional polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling and assembly.
Bottom
Absolute Maximum Ratings @ TAMB = 25C
(unless otherwise specified) Parameter Reverse Voltage Absolute Maximum -50V -65C to +125C -65C to +150C +175C
Applications
The ultra low capacitance of the MA4AGBLP912 device makes it ideally suited for use through W-band. The low RC product and low profile of the beamlead PIN diode allows for use in microwave and millimeter wave switch designs, where low insertion loss and high isolation are required. The operating bias conditions of +10mA for the low loss state, and 0V, for the isolation state permits the use of a simple +5V TTL gate driver. AlGaAs, beamlead diodes, can be used in switching arrays on radar systems, high speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies.
Operating Temperature Storage Temperature Junction Temperature
Forward DC Current C.W. Incident Power
Mounting Temperature
40mA +23dBm
+235C for 10 seconds
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
MA4AGBLP912
AlGaAs Beamlead PIN Diode
Electrical Specifications at TAMB = 25C
Test Conditions Total Capacitance @ -5V/1 MHz Forward Resistance @ +20mA/1 GHz Forward Voltage at +10mA Leakage Current at -40 V Minority Carrier Lifetime Paramters Ct Rs Vf Ir TL Units fF Ohms Volts nA nS Min - - 1.2 - - Typical 26 4 1.36 50 5 Max. 30 4.9 1.5 300 10
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INCHES DIM A B C D E
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MM MIN. 0.2286 0.1245 0.0940 0.1245 0.0508 0.5537 MAX. 0.3302 0.2261 0.1448 0.2261 0.1524 0.70612
MIN. 0.009 0.0049 0.0037 0.0049 0.002 0.0218
MAX. 0.013 0.0089 0.0057 0.0089 0.006 0.0278
F
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
MA4AGBLP912
AlGaAs Beamlead PIN Diode
Diode Model
Rs
V3
Ls = 0.5
Ct
MA4AGBLP912 SPICE Model
wBv= 50 V e-= 8600 cm^2/V-sec wPmax= 100 mW Ffe= 1.0 Wi= 3.0 um Rr= 10 K Ohms Cjmin= 0.020 pF Tau= 10 nsec Rs(I)= Rc + Rj(I) = 0.10 Ohm + Rj(I) Cj0= 0.022 pF Vj= 1.35 V M= 0.5 Fc= 0.5 Imax= 0.04 A Kf= 0.0 Af=1.0
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
Is=1.0E-14 A Vi=0.0 V
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
MA4AGBLP912
AlGaAs Beamlead PIN Diode
Handling and Assembly Procedures
The following precautions should be observed to avoid damaging these devices. Cleanliness These devices should be handled in a clean environment. Static Sensitivity Aluminum Gallium Arsenide PIN diodes are Class 1 ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. General Handling These devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. Beam lead devices must, however, be handled with extreme care since the leads may easily be distorted or broken by the normal pressures exerted when handled with tweezers. A vacuum pencil with a #27 tip is recommended for picking and placing. Attachment These devices were designed to be inserted onto hard or soft substrates. Recommended methods of attachment include thermo-compression bonding, parallel-gap welding and electrically conductive silver epoxy.
V3
Ordering Information
Part Number MA4AGBLP912 Packaging Gel Pak
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

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