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| CORPORATION G M BT 2 9 0 7 A Description Features & collector saturation voltage Low & High speed switching & For complementary use with NPN type GMBT2222A ISSUED DATE :2003/06/02 REVISED DATE :2005/06/27B P NP E PITAX I AL PL ANAR T RANSI STOR The GMBT2907A is designed for general purpose amplifier and high speed, medium-power switching applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage at Ta=25 : Collector to Emitter Voltage at Ta=25 : Emitter to Base Voltage at Ta=25 : Collector Current at Ta=25 : Total Power Dissipation at Ta=25 : Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -60 -60 -5 -600 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO ICEX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob at Ta = 25 : Min. -60 -60 -5 75 100 100 100 50 200 Typ. -0.2 -0.5 180 Max. -10 -50 -0.4 -1.6 -1.3 -2.6 300 8.0 MHz pF Unit V V V nA nA V V mV V IC=-10uA, IE=0 IC=-10mA, IB=0 IE=-10uA, IC=0 VCE=-50V, IE=0 VCE=-30V, VBE(OFF)=-0.5V IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA VCE=-10V, IC=-0.1mA VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-150mA VCE=-10V, IC=-500mA VCE=-20V, IC=-50mA, f=100MHz VCE=-10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions 1/4 CORPORATION Switching Characteristics Symbol ton (Turn-On Time) td (Delay Time) tr (Rise Time) toff (Turn-Off Time) ts (Storage Time) tf (Fall Time) Min. Typ. Max. 45 10 40 100 80 30 Unit ns ns ns ns ns ns VCC=-30V, IC=-150mA, IB1=-15mA VCC=-6V, IC=-150mA, IB1=IB2=-15mA ISSUED DATE :2003/06/02 REVISED DATE :2005/06/27B Test Conditions Switching Time Equivalent Test Circuits Delay and Rise Time Test Circuit Storage and Fall Time Test Circuit Characteristics Curve Fig 1. DC Current Gain Fig 2. Collector saturation Region 2/4 CORPORATION ISSUED DATE :2003/06/02 REVISED DATE :2005/06/27B Fig 3. Turn-On Time Fig 4. Turn-Off Time Fig 5. Frequency Effects Fig 6. Source Resistance Effects Fig 7. Capacitance Fig 8. Current-Gain Bandwidth Product 3/4 CORPORATION ISSUED DATE :2003/06/02 REVISED DATE :2005/06/27B Fig 9. "On" Voltage Fig 10. Temperature Coefficients Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4 |
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