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| UNISONIC TECHNOLOGIES CO., LTD B772SS MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. PNP SILICON TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS Lead-free: B772SSL Halogen-free: B772SSG ORDERING INFORMATION Normal B772SS-x-AE3-R Order Number Lead Free B772SSL-X-AE3-R Halogen Free B772SSG-x-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING B72 L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright (c) 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-089,E B772SS ABSOLUTE MAXIMUM RATINGS (Ta = 25C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO ICP IC IB PNP SILICON TRANSISTOR RATINGS UNIT -40 V -30 V -5 V Pulse -7 A Collector Current DC -3 A Base Current -0.6 A TC=25C 10 W Collector Dissipation PD Ta=25C 350 mW Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25C, unless otherwise specified) SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE1 DC Current Gain(Note) hFE2 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance Cob Note: Pulse test: PW<300s, Duty Cycle<2% PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current TEST CONDITIONS IC=-100A, IE=0 IC=-1mA, IB=0 IE=-100A, IC=0 VCB=-30V ,IE=0 VCE=-30V ,IB=0 VEB=-3V, IC=0 VCE=-2V, IC=-20mA VCE=-2V, IC=-1A IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-5V, IC=-0.1A VCB=-10V, IE=0,f=1MHz MIN -40 -30 -5 TYP MAX UNIT V V V -1000 nA -1000 nA -1000 nA 200 150 400 -0.3 -0.5 V -1.0 -2.0 V 80 MHz 45 pF 30 100 CLASSIFICATION OF hFE2 RANK RANGE Q 100 ~ 200 P 160 ~ 320 E 200 ~ 400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R206-089.E B772SS TYPICAL CHARACTERICS Static Characteristics 150 1.6 -IB=9mA -IB=8mA -IB=7mA 1.2 -IB=6mA -IB=5mA 0.8 -IB=4mA -IB=3mA 0.4 -IB=2mA -IB=1mA 0 0 4 8 12 16 -Collector-Emitter Voltage, BVCEO (V) Power Derating 3 10 12 20 0 -50 50 100 PNP SILICON TRANSISTOR Derating Curve of Safe Operating Areas S/ b lim ite d ss Di ip at n io i te lim d 0 50 100 150 Case Temperature, Tc (C) Collector Output Capacitance 200 8 2 10 IE=0 f=1MHz 4 1 10 0 -50 0 50 100 150 200 0 10 10 Case Temperature, Tc (C) Current Gain-Bandwidth Product 0 10 -1 10 -2 10 -3 -Collector-Base Voltage, BVCBO(V) Safe Operating Area 1 10 Ic(max),Pulse 10 mS Ic(max),DC 0. 1m 1m 3 10 VCE=5V 2 S S 10 10 IB=8mA IB=8mA 0 10 1 -1 10 10 0 10 -2 -1 10 10 0 10 1 10 -2 10 0 10 1 2 10 Collector Current, Ic (A) Collector-Emitter Voltage, BVCEO(V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-089.E B772SS TYPICAL CHARACTERICS(Cont.) PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-089.E |
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