 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| WFF7N60 Silicon N-Channel MOSFET Features 7A,600V,RDS(on)(Max 1.0)@VGS=10V Ultra-low Gate Charge(Typical 29nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast,high efficiency switched mode power supplies, active power factor correction. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above 25 TJ,Tstg TL Junction and Storage Temperature Channel Temperature 0.38 -55~150 300 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25) (Note2) (Note1) (Note3) (Note1) 4.1* 26 30 240 15 4.5 48 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 600 7* Units V A *Drain current limited by junction temperature Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 2.6 62.5 Units /W /W Rev.A Sep.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. WFF7N60 Electrical Characteristics(Tc=25) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=30V,VDS=0V IG=10 A,VDS=0V VDS=600V,VGS=0V Min 30 600 2 - Type - Max 100 10 100 Unit nA V A A V V S Drain cut -off current IDSS VDS=480V,Tc=125 Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff ID=250 A,VGS=0V VDS=10V,ID=250 A VGS=10V,ID=3.5A VDS=50V,ID=3.5A VDS=25V, VGS=0V, f=1MHz VDD=200V, ID=7.0A RG=25 (Note4,5) VDD=480V, 0.8 8.7 1100 135 16 30 80 65 60 29 7 14.5 4 1.0 1430 175 21 70 170 pF ns 140 130 38 nC - - Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, ID=7.0A (Note4,5) - Source-Drain Ratings and Characteristics(Ta=25) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=7.4A,VGS=0V IDR=7.4A,VGS=0V, dIDR / dt =100 A / s Min - Type 320 2.4 Max 7.0 28 1.4 - Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH IAS=7A,VDD=50V,RG=0 ,Starting TJ=25 3.ISD7.0A,di/dt200A/us,VDD Steady, all for your advance WFF7N60 Fig.1 On-State Characteristics Fig.2 Transfer Current characteristics Fig.3 On Resistance variation vs Drain Current Fig.4 Body Diode Forward Voltage Variation with Source Current and temperature Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance WFF7N60 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, all for your advance WFF7N60 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance WFF7N60 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance WFF7N60 TO-220F Package Dimension Unit:mm 7/7 Steady, all for your advance |
Price & Availability of WFF7N60
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |