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| CMPT591E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. The CMPT591E features Low VCE(SAT), high hFE, and has been designed for high current general purpose amplifier applications. MARKING CODE: C59 COMPLEMENTARY TYPE: CMPT491E SOT-23 CASE FEATURED ENHANCED SPECIFICATIONS: VCE(SAT) @ 1.0A = 0.6V MAX (from 0.4V MAX) hFE @ 500mA = 200 MIN (from 100 MIN) MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB ICM PD TJ, Tstg JA otherwise noted) MIN 80 60 5.0 1.0 200 2.0 350 -65 to +150 357 UNITS V V V A mA A mW C C/W ELECTRICAL CHARACTERISTICS: (TA=25C unless SYMBOL TEST CONDITIONS ICBO VCB=60V IEBO VEB=4.0V BVCBO IC=100A BVCEO IC=10mA BVEBO IE=100A IC=500mA, IB=50mA VCE(SAT) VCE(SAT) IC=1.0A, IB=100mA IC=1.0A, IB=100mA VBE(SAT) VBE(ON) VCE=5.0V, IC=1.0A VCE=5.0V, IC=1.0mA hFE hFE VCE=5.0V, IC=500mA hFE VCE=5.0V, IC=1.0A hFE VCE=5.0V, IC=2.0A fT VCE=10V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz Enhanced specification MAX 100 100 80 60 5.0 0.20 0.40 1.1 1.0 200 200 50 15 150 600 UNITS nA nA V V V V V V V 10 MHz pF R3 (27-January 2010) CMPT591E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C59 R3 (27-January 2010) w w w. c e n t r a l s e m i . c o m |
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