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| SMP690G-KQS MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES * * * * * * * * * HIGH SENSITIVITY WIDEST SPECTRAL RESPONSE ENHANCED UV SENSITIVITY PHOTODIODE ISOLATED FROM PACKAGE EXCELLENT LINEARITY LOW NOISE INTEGRAL OPTICAL FILTER OPTION note 1 TO8 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE O 14.0 O 12.0 O 0.45 LEAD 8.0 38 nom. 5.5 Note 1 Contact Semelab Plc for filter options DESCRIPTION 3 2 1 The SMP690G-KQS is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The package window has greater ultra-violet light transmission, thus extending the useful spectral range of the device. The electrical terminations are via two leads of diameter 0.018" on pitch centre diameter of 0.2". The photodiode is electrically isolated from the package, which has a separate earth lead. The larger photodiode active area provides greater sensitivity than the SMP600 range of devices, with a corresponding reduction in speed. The photodiode structure has been optimised for high sensitivity, light measurement applications across the infra-red to ultra-violet spectrum. Inclusion of a suitable optical filter into the package can produce a device that responds only to ultra-violet light. The metal can, isolated photodiode and optional screening mesh ensure a rugged device with a high degree of immunity to conducted and radiated electrical interference. TO8 Small Pin 1 - Anode Pin 2 - Cathode Pin 3 -Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. -40C to +70C -45C to +80C 0.35% per C x2 per 8C rise 60V Prelim. 1/98 SMP690G-KQS CHARACTERISTICS (Tamb=25C unless otherwise stated) Characteristic Test Conditions. Responsively Active Area Dark Current Breakdown Voltage Capacitance E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark 30V Reverse 50 900nm Directional characteristics Min. 0.45 Typ. 0.55 15 Max. Units A/W mm2 at 900nm 1V Reverse 10V Reverse 10A Reverse 0V Reverse 20V Reverse 60 2 6 nA V pF 80 90 25 12 20x10-14 0.45 Rise Time NEP ns W/Hz Directional Characteristics 1 80 70 Angle from sensor to illumination 1 0.9 0.8 60 50 0.6 Normalised Incident Power Normalised incident power 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 40 30 0.4 20 0.2 10 0 0 0.2 0.4 0.6 0.8 1 Normalised incident power 0 10 20 30 40 50 60 70 80 90 Angle from se nsor to illumination Spectral Response 100 Relative Responsivity (%) 80 60 40 20 0 0 200 400 600 800 Wave le ngth (nm) 1000 1200 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/98 |
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