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PD - 97407
IRLB3813PBF
Applications
l l
HEXFET(R) Power MOSFET
Optimized for UPS/Inverter Applications
l
High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Power Tools
VDSS
RDS(on) max Qg (typ.) 30V 1.95m@VGS = 10V 57nC
D
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free
G
D
S
TO-220AB
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
30 20 260h 190h 1050 230 120 1.6 -55 to + 175 300 (1.6mm from case) 10lbxin (1.1Nxm)
Units
V
c
A
g g
W W/C C
Thermal Resistance
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient
g
Parameter
Typ.
--- 0.50 ---
Max.
0.64 --- 62
Units
C/W
f
Notes through are on page 9
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1
07/03/09
IRLB3813PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energyd Avalanche CurrentA
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 140 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 11 1.60 2.00 1.90 -7.8 --- --- --- --- --- 57 16 6.7 19 15 25.7 35 0.87 36 170 33 60 8420 1620 650 --- V
Conditions
VGS = 0V, ID = 250A
--- mV/C Reference to 25C, ID = 1.0mA m VGS = 10V, ID = 60A 1.95 2.60 2.35 --- 1.0 100 100 -100 --- 86 --- --- --- --- --- --- 1.3 --- --- --- --- --- --- --- Typ. --- --- pF nC ns nC V VGS = 4.5V, ID = 48A VDS = VGS, ID = 150A
e e
mV/C A VDS = 24V, VGS = 0V nA S VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 48A VDS = 15V VGS = 4.5V ID = 48A See Fig. 16 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5Ve ID = 48A RG = 1.8 See Fig. 14 VGS = 0V VDS = 15V = 1.0MHz Max. 520 48 Units mJ A
Avalanche Characteristics
EAS IAR
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 24 22 260h A 1050 1.0 36 33 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 48A, VGS = 0V TJ = 25C, IF = 48A, VDD = 15V di/dt = 244A/s
e
e
2
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IRLB3813PBF
10000
TOP VGS 10V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V
1000
TOP VGS 10V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100 3.0V
100
60s PULSE WIDTH
Tj = 25C 3.0V 10 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
60s PULSE WIDTH
Tj = 175C 10 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 120A VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175C
1.5
10
T J = 25C
1.0
1 VDS = 15V 60s PULSE WIDTH 1 2 3 4 5 6 7
0.1
0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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3
IRLB3813PBF
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
14.0 ID= 48A
VGS, Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0
C, Capacitance (pF)
VDS= 24V VDS= 15V
10000
Ciss
Coss 1000 Crss
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0
25
50
75
100
125
150
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000 T J = 175C 100
10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 1msec 100 10msec
10
TJ = 25C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, Source-to-Drain Voltage (V)
10 Tc = 25C Tj = 175C Single Pulse 1 0 1 10 100 VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLB3813PBF
300 250
ID, Drain Current (A)
3.0 Limited By Package
VGS(th) , Gate threshold Voltage (V)
2.5 2.0 1.5 1.0 0.5 0.0
200 150 100 50 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
ID = 150A ID = 1.0mA ID = 1.0A
-75 -50 -25 0
25 50 75 100 125 150 175 200
TJ , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
1
Thermal Response ( Z thJC ) C/W
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.4985 0.0022 0.0001 0.1392
0.01
0.004600 8.246580 6.149340 0.000300
i (sec)
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1
0.0001 1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLB3813PBF
RDS(on), Drain-to -Source On Resistance (m )
12 ID = 60A 10 8 6 4 2 TJ = 25C 0 2 4 6 8 10 T J = 125C
2200
EAS , Single Pulse Avalanche Energy (mJ)
2000 1800 1600 1400 1200 1000 800 600 400 200 0 25 50 75 100
ID TOP 17A 27A BOTTOM 48A
125
150
175
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13a. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
20V VGS
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 13b. Unclamped Inductive Test Circuit
RD
Fig 13c. Unclamped Inductive Waveforms
VDS VGS RG V GS
Pulse Width 1 s Duty Factor 0.1 %
VDS 90%
D.U.T.
+
-V DD
10% VGS
td(on) tr t d(off) tf
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
6
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IRLB3813PBF
Driver Gate Drive
D.U.T
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgodr
Qgd
Qgs2 Qgs1
Current Sampling Resistors
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
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7
IRLB3813PBF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRLB3813PBF
TO-220AB Part Marking Information
@Y6HQG@) UCDTADTA6IADSA GPUA8P9@A A DIU@SI6UDPI6G (A! S@8UDAD@S GPBP 96U@A8P9@ @6SAA2A! X@@FA GDI@A8 ( Q6SUAIVH7@S &'(
6TT@H7G@9APIAXXA
DIAUC@A6TT@H7GAGDI@AA8A
Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqAAArrA
6TT@H7G GPUA8P9@
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
When mounted on 1" square PCB (FR-4 or G-10 Material).
max. junction temperature. Starting TJ = 25C, L = 0.45mH, RG = 25, IAS = 48A. Pulse width 400s; duty cycle 2%.
For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2009
9

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