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DST847BPDP6
COMPLEMENTARY DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
* * * * * Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Ultra Small Package
Mechanical Data
* * * * * Case: SOT-963 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (approximate)
SOT-963
6
5
4
Q1
Q2
1
Top View
2
3
Device Schematic
Ordering Information
Device DST847BPDP6-7
Notes:
Packaging SOT-963
Shipping 10,000/Tape & Reel
1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc's "Green" Policy can be found on our website at http://www.diodes.com
Marking Information
TC
TC = Product Type Marking Code
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
1 of 8 www.diodes.com
January 2010
(c) Diodes Incorporated
DST847BPDP6
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Value 50(-50) 45(-45) 6.0(-5.0) 100 (-100) Unit V V V mA
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3)
Thermal Characteristics
Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range
Notes: 3. Device mounted on FR-4 PCB with minimum recommended pad layout.
Symbol PD RJA TJ, TSTG
Value 250 500 -55 to +150
Unit mW C/W C
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.9 D = 0.05 RJA (t) = r(t) * R JA RJA = 370C/W D = 0.02
0.01
P(pk) D = 0.01 D = 0.005
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2
D = Single Pulse
0.001 0.000001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response
10
100
1,000
1,000 P(pk), PEAK TRANSIENT POWER (W)
0.4
RJA(t) = r(t) * RJA RJA = 370C/W TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2
PD, POWER DISSIPATION (W)
100
Single Pulse
0.3
Note 3
10
0.2
1
0.1
0.1
0.01 0.00001 0.001 0.1 10 1,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation
0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) Fig. 3 Power Dissipation vs. Ambient Temperature
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
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DST847BPDP6
Electrical Characteristics - Q1 NPN Transistor @TA = 25C unless otherwise specified
Characteristic (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Current Gain-Bandwidth Product Collector-Base Capacitance
Notes:
Symbol V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE(sat) VBE(on) fT Ccbo
Min 50 50 45 6 100 200 580 100 -
Typical 150 150 65 8.35 220 300 50 122 760 880 650 725 175 1.5
Max 15 470 125 300 1000 1100 750 800 -
Unit V V V V nA
Test Condition IC = 10A, IB = 0 IC = 10A, IB = 0 IC = 1mA, IB = 0 IE = 1A, IC = 0
VCB = 30V IC = 10A, VCE = 5V IC = 2.0mA, VCE = 5V IC = 10mA, IB = 0.5mA mV IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA mV IC = 100mA, IB = 5.0mA IC = 2.0mA, VCE = 5V mV IC = 10mA, VCE = 5V VCE = 5V, IC = 10mA, MHz f = 100MHz pF VCB = 10V, f = 1.0MHz
4. Short duration pulse test used to minimize self-heating effect
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
3 of 8 www.diodes.com
January 2010
(c) Diodes Incorporated
DST847BPDP6 Typical Characteristics - Q1 NPN Transistor
0.16
IB = 1.8mA IB = 2mA
450
VCE = 5V
0.14 IC, COLLECTOR CURRENT (A) 0.12 0.10 0.08 0.06 0.04 0.02 0
IB = 1.6mA IB = 1.4mA IB = 1.2mA
400 350 hFE, DC CURRENT GAIN
IB = 1mA IB = 0.8mA IB = 0.6mA IB = 0.4mA
TA = 150C TA = 100C
300 250 200 150 100 50 0
TA = 25C
T A = -55C
IB = 0.2mA
0
1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current
0.20 0.18 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.16 0.14 0.12 0.10 0.08 0.06 0.04
TA = 25C TA = 150C T A = 100C IC/IB = 10
1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
IC/IB = 20
TA = 10C
0.1
TA = 20C T A = 50C TA = 100C
0.02 0 1
T A = -55C
0.01
10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current
VCE = 5V
10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current
1
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
1.1 1.0 0.9 0.8 0.7
T A = 25C TA = -55C
0.8
TA = -55C
0.6
T A = 25C
0.6 0.5 0.4 0.3 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current January 2010
(c) Diodes Incorporated
TA = 100C
0.4
TA = 150C
TA = 100C T A = 150C
0.2 0.1
1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current
1
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
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DST847BPDP6
Electrical Characteristics - Q2 PNP Transistor @TA = 25C unless otherwise specified
Characteristic (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Current Gain-Bandwidth Product Output Capacitance
Notes:
Symbol V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE(sat) VBE(on) fT Cobo
Min -50 -50 -45 -6 100 200 -600 100 -
Typical -100 -90 -65 -8.5 340 330 -70 -300 -760 -885 -670 -715 340 2.0
Max -15 470 -175 -500 -1000 -1100 -780 -850 -
Unit V V V V nA
Test Condition IC = -10A, IB = 0 IC = -10A, IB = 0 IC = -1mA, IB = 0 IE = -1A, IC = 0
VCB = -30V IC = -10A, VCE = -5V IC = -2.0mA, VCE = -5V IC = -10mA, IB = -0.5mA mV IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA mV IC = -100mA, IB = -5.0mA IC = -2.0mA, VCE = -5V mV IC = -10mA, VCE = -5V VCE = -5V, IC = -10mA, MHz f = 100MHz pF VCB = -10V, f = 1.0MHz
4. Short duration pulse test used to minimize self-heating effect.
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
5 of 8 www.diodes.com
January 2010
(c) Diodes Incorporated
DST847BPDP6 Typical Characteristics - Q2 PNP Transistor
0.18
IB = -2mA
1,000
IB = -1.8mA IB = -1.6mA
T A = 150C TA = 85C VCE = 5V T A = 125C
0.16 -IC, COLLECTOR CURRENT (A) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0
IB = -1.4mA IB = -1.2mA
hFE, DC CURRENT GAIN
TA = 25C
IB = -1mA IB = -0.8mA IB = -0.6mA IB = -0.4mA
TA = -55C
100
IB = -0.2mA
1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 10 Typical Collector Current vs. Collector-Emitter Voltage
10 0.1
1 10 100 1,000 -IC, COLLECTOR CURRENT (A) Fig. 11 Typical DC Current Gain vs. Collector Current
1
1
IC/IB = 10
IC/IB = 20
-VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
-VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
TA = 150C
0.1
TA = 150C TA = 125C T A = 85C T A = 25C T A = -55C
0.1
T A = 125C
TA = 85C TA = 25C TA = -55C
0.01 0.1
1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 12 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
VCE = -5V
0.01 0.1
1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 13 Typical Collector-Emitter Saturation Voltage vs. Collector Current
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
1.2
IC/IB = 10
1.0
1.0
0.8
TA = -55C
0.8
TA = -55C
0.6
T A = 25C
0.6
T A = 25C
0.4
T A = 150C TA = 125C
T A = 85C
TA = 85C TA = 125C
0.2
0.4
T A = 150C
0 0.1
1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 14 Typical Base-Emitter Turn-On Voltage vs. Collector Current
0.2 0.1
1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 15 Typical Base-Emitter Saturation Voltage vs. Collector Current
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
6 of 8 www.diodes.com
January 2010
(c) Diodes Incorporated
DST847BPDP6
Package Outline Dimensions
D e1 L
E1
E
e
b (6 places)
c
A A1
SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 C 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm
Suggest Pad Layout
C
C
Y1
Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100
Y (6X)
X (6X)
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
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January 2010
(c) Diodes Incorporated
DST847BPDP6
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
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January 2010
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