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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 65 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. CHT846BPT CURRENT 0.1 Ampere FEATURE .041 (1.05) .033 (0.85) SOT-23 * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. .110 (2.80) .082 (2.10) .119 (3.04) (1) .066 (1.70) (3) (2) .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT 1 3 .045 (1.15) .033 (0.85) 2 .019 (0.50) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL V CBO V CEO VEBO IC PC PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Collector power dissipation Note2 Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board. 2. When mounted on a 7X5X0.6mm ceramic board. storage temperature junction temperature CONDITIONS open emitter open base open collector - - - - - - -55 - MIN. MAX. 80 65 6 0.1 0.35 W 0.4 +150 150 C C V V V A UNIT 2004-10 RATING CHARACTERISTIC ( CHT846BPT) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO BVCBO BVCEO BVEBO hFE VCEsat VBE(on) Cib Cob fT Note 1. Pulse test: t p 300 s; 0.02. 2. hFE: Classification Q: 110 to 220, R: 200 to 450, S: 420 to 800 CONDITIONS IE = 0; VCB = 30 V collector cut-off current IC = 0; VCB = 30 V; TA = 150 OC collector-base breakdown voltage IC =10uA collector-emitter breakdown voltage IC =10mA IE =1uA emitter-base breakdown voltage VCE /I C =5V/2 mA current transfer ratio DC IC = 10 mA ; I B = 0.5 mA collector-emitter saturation IC = 100 mA ; I B = 5 mA voltage base-emitter satur ation voltage emitter input capacitance collector output capacitance transition frequency IC = 10 mA;VCE= 5.0 V IC = 0; VCB = 0.5V ; f = 1 MH z IE = 0; VCB = -10V ; f = 1 MH z IE = -20 mA; VCE = 5 V ; f = 100 MHz PARAMETER MIN. - - 80 65 6 110 - - 0.58 - - - Typ. - - - - - - - - - 8 3 200 UNIT MAX. 15 nA 5 uA V - V - - V 800 250 mV 600 0.77 - - - mV V pF pF MHz RATING CHARACTERISTIC CURVES ( CHT846BPT) fig1.Griunded emitter output characteristics COLLECTOR CURRENT : Ic (mA) 100 600 500 400 50 300 200 100 0 0 Ta=25 C 10 COLLECTOR-EMITTERVOLTAGE : VCE(V) 5 IB=0uA O COLLECTOR EMITTER SATURATION fig2.Co llector-Emitter Saturation Voltage vs Collector Current VOLTAGE : VCE(Sat)(V) 0.3 Ta=25 C IC/IB=10 O 0.2 0.1 0 1.0 10 100 I C - COLLECTOR CURRENT (mA) 1000 RATING CHARACTERISTIC CURVES ( CHT846BPT) fig3.DC current gain VS. collector current ( 1 ) 1000 DC CURRENT GAIN : hFE Ta=25 C DC CURRENT GAIN : hFE O fig4.DC current gain VS. collector current ( 2 ) 1000 Ta=125 C O 25 O C -55 C O Ta=25 C O VCE=10V 100 1V 100 10 0.1 1 10 100 I C - COLLECTO CURRENT (mA) 1000 10 0.1 1 10 100 1000 I C - COLL ECTOR CURRENT (mA) BASE EMITTER SATURATION VOLTAGE : VBE(Sat)(V) fig5.AC current gain VS. collector current 1000 AC CURRENT GAIN : hFE Ta=25 C VCE=10V f=1KHZ O fig6.Base-emitter saturation voltage VS. collector current 1.8 1.6 1.2 Ta=25 C IC/IB=10 O 100 0.8 0.4 0 1.0 10 100 1000 I C - COLLECTO CURRENT (mA) 10 0.1 1 10 100 1000 I C - COLLECTO CURRENT (mA) BASE EMITTER VOLTAGE : VBE(ON)(V) fig7.Grounded emitter propagation characteristics 1.8 1.6 1.2 TURN ON TIME : ton(ns) Ta=25 C VCE=10V O fig8.Turn-on time VS. collector current 1000 Ta=25 C IC/IB=10 O 0.8 10 0 VCC=30V 10V 10 1 10 100 I C - COLLECTOR CURRENT (mA) 0.4 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1000 RATING CHARACTERISTIC CURVES ( CHT846BPT) fig9.Rise time VS. collector current 500 Ta=25 C Vcc=30V IC/IB=10 O fig10.Fall time VS. collector current 500 FALL TIME : tr(ns) Ta=25 C Vcc=30V O RISE TIME : tr(ns) 100 100 10 5 1.0 10 1.0 100 10 I C - COLLECTO CURRENT (mA) 1000 100 10 I C - COLLECTO CURRENT (mA) 1000 fig11.Input / output capacitance VS. voltage 100 Ta=25 C f=1MHZ O CAPAITANCE(pF) Cib 10 Cob 1 0.1 1.0 10 REVERSE BIAS VOLTAGE(V) 100 |
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