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APTM60A11FT1G
Phase leg MOSFET Power Module
5 Q1 7 8 Q2 9 10 1 2 12 3 4 NTC 6 11
VDSS = 600V RDSon = 90m typ @ Tj = 25C ID = 40A @ Tc = 25C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
Features * Power MOS 8TM FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
* * * Benefits * * * * * *
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C Max ratings 600 40 30 245 30 110 390 33 Unit V
February, 2010 1-5 APTM60A11FT1G - Rev 0
A V m W A
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM60A11FT1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS = 600V VGS = 0V Tj = 125C VGS = 10V, ID = 33A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 100 1000 110 5 100 Unit A m V nA
3
90 4
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 33A Resistive switching @ 25C VGS = 15V VBus = 400V ID = 33A RG = 2.2 Min Typ 10552 1210 108 330 70 140 75 85 225 70 ns nC Max Unit pF
Source - Drain diode ratings and characteristics
Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 33A Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ Max 40 30 1 30 250 460 Unit A V V/ns ns C
IS = - 33A VR = 100V diS/dt = 100A/s
1.27 3.32
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 33A di/dt 1000A/s VDD 400V Tj 125C
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APTM60A11FT1G - Rev 0
February, 2010
APTM60A11FT1G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 4000 -40 -40 -40 2.5
Typ
Max 0.32 150 125 100 4.7 80
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTM60A11FT1G - Rev 0
February, 2010
APTM60A11FT1G
Typical Performance Curve
Low Voltage Output Characteristics 150
VGS=10V
Low Voltage Output Characteristics 100 ID, Drain Current (A)
VGS=7 &8V
ID, Drain Current (A)
125 100
TJ=25C
80 60 40
5.5V 6V
TJ=125C
75 50 25 0 0 5 10 15 20
20
TJ=125C
0 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) VDS, Drain to Source Voltage (V) Transfert Characteristics
RDSon, Drain to Source ON resistance
Normalized RDSon vs. Temperature 3 ID, Drain Current (A) 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150
VGS=10V ID=33A
100 80
TJ=125C
60 40 20 0 0
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle TJ=25C
1
2
3
4
5
6
7
TJ, Junction Temperature (C) Gate Charge vs Gate to Source VGS, Gate to Source Voltage 12 C, Capacitance (pF) 10 8 6
VDS=480V ID=33A TJ=25C VDS=120V VDS=300V
VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000
Ciss
10000 1000 100
Crss Coss
4 2 0 0 50 100 150 200 250 300 350
10 1 0 50 100 150 200
Gate Charge (nC)
VDS, Drain to Source Voltage (V)
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4-5
APTM60A11FT1G - Rev 0
February, 2010
APTM60A11FT1G
Drain Current vs Source to Drain Voltage ISD, Reverse Drain Current (A) 120 100 80
TJ=125C
60 40 20 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35
TJ=25C
Thermal Impedance (C/W)
0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001
0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM60A11FT1G - Rev 0
Microsemi reserves the right to change, without notice, the specifications and information contained herein
February, 2010

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