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SGP30N60HS SGW30N60HS
High Speed IGBT in NPT-technology
C
* 30% lower Eoff compared to previous generation * Short circuit withstand time - 10 s * Designed for operation above 30 kHz * NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution * * * *
G E
PG-TO-220-3-1
PG-TO-247-3
High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V 600V IC 30 30 Eoff) 480J 480J Tj Marking Package PG-TO-220-3-1 PG-TO-247-3
Type SGP30N60HS SGW30N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C
150C G30N60HS 150C G30N60HS
Symbol VCE IC
Value 600 41 30
Unit V A
Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25 start TJ=25C Gate-emitter voltage static transient (tp<1s, D<0.05) Short circuit withstand time2) VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s
ICpuls EAS
112 112 165 mJ
VGE tSC Ptot Tj , Tstg Tj(tl) -
20 30 10 250 -55...+150 175 260
V s W C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.4 Nov 09
Power Semiconductors
SGP30N60HS SGW30N60HS
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 62 40 RthJC 0.5 K/W Symbol Conditions Max. Value Unit
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 50 0A VCE(sat) V G E = 15V, I C = 30A T j = 25 C T j = 15 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 70 0A, V C E =V G E V C E = 600V ,V G E = 0V T j = 25 C T j = 15 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
Symbol
Conditions
Value min. 600 Typ. 2.8 3.5 3 4 20 max. 3.15 4.00 5
Unit
V
A 40 3000 100 nA S
IGES gfs
V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 30A
Ciss Coss Crss QGate LE IC(SC)
V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 4 80V, I C = 30A V G E = 1 5V PG -TO -220-3-1 PG -TO -247-3-21 V G E = 1 5V,t S C 10s V C C 600V, T j 150 C
-
1500 150 92 141 7 13 220
pF
nC nH A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.4 Nov 09
Power Semiconductors
SGP30N60HS SGW30N60HS
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 4 00V, I C = 30A, V G E = 0/ 1 5V , R G = 1 1 L 1 ) = 60nH, 1) C = 40 pF Energy losses include "tail" and diode reverse recovery. 20 21 250 25 0.60 0.55 1.15 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets T j = 15 0 C V C C = 4 00V, I C = 30A, V G E = 0/ 1 5V , R G = 1. 8 L 1 ) = 60nH, C 1 ) = 40pF Energy losses include "tail" and diode reverse recovery. T j = 15 0 C V C C = 4 00V, I C = 30A, V G E = 0/ 1 5V , R G = 11 L 1 ) = 60nH, 1) C = 40pF Energy losses include "tail" and diode reverse recovery. 16 13 122 29 0.78 0.48 1.26 20 19 274 27 0.91 0.70 1.61 mJ ns mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L and Stray capacity C due to test circuit in Figure E. 3 Rev. 2.4 Nov 09
Power Semiconductors
SGP30N60HS SGW30N60HS
100A
100A
tP=4s 15s
IC, COLLECTOR CURRENT
80A
IC, COLLECTOR CURRENT
T C=80C
10A
50s 200s 1ms
60A
T C=110C
40A
Ic
1A
20A
Ic
10Hz 100Hz 1kHz 10kHz 100kHz
DC 0.1A 1V
0A
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 11)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C; VGE=15V)
Limited by Bond wire
40A
200W
IC, COLLECTOR CURRENT
5 0 C 7 5 C 1 0 0 C 1 2 5 C
POWER DISSIPATION
30A
150W
100W
20A
Ptot,
50W
10A
0W 2 5 C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
4
Rev. 2.4 Nov 09
SGP30N60HS SGW30N60HS
80A 70A 60A 50A 40A 30A 20A 10A 0A 0V 2V 4V 6V V GE=20V 15V 13V 11V 9V 7V 5V
80A 70A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
60A 50A 40A 30A 20A 10A 0A 0V
VGE=20V 15V 13V 11V 9V 7V 5V
2V
4V
6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50C 0C 50C 100C 150C I C =15A I C =30A I C =60A
80A
T J = -5 5 C 2 5 C 1 5 0 C
IC, COLLECTOR CURRENT
60A
40A
20A
0A 0V
2V
4V
6V
8V
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.4 Nov 09
SGP30N60HS SGW30N60HS
td(off)
t, SWITCHING TIMES
100ns
t, SWITCHING TIMES
100 ns
td(off)
tf
tf
td(on) tr 10ns 0A 10A 20A 30A 40A 50A
10 ns
td(on) tr
0 5 10 15 20 25
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=11, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50C 0C 50C 100C min. 150C typ. max.
t, SWITCHING TIMES
100ns
tf tr td(on) 10ns 0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=30A, RG=11, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA)
Power Semiconductors
6
Rev. 2.4 Nov 09
SGP30N60HS SGW30N60HS
5,0mJ *) E on and E ts include losses due to diode recovery
3,0 mJ
*) Eon and Ets include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
4,0mJ
E, SWITCHING ENERGY LOSSES
2,5 mJ 2,0 mJ 1,5 mJ 1,0 mJ 0,5 mJ Eoff
3,0mJ E on* 2,0mJ
Ets* Eon*
1,0mJ
Eoff
0,0mJ 0A 10A 20A 30A 40A 50A 60A
0,0 mJ
0
5
10
15
20
25
30
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=11, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
1,5mJ
Ets*
ZthJC, TRANSIENT THERMAL RESISTANCE
*) Eon and Ets include losses due to diode recovery
D=0.5 10 K/W
-1
0.2 0.1 0.05
1,0mJ
Eon*
10 K/W
-2
0.02
0.01 10 K/W
-3
0,5mJ
Eoff
R,(K/W) 0.3681 0.0938 0.038
R1
, (s) 0.0555 1.26E-03 1.49E-04
R2
single pulse 10 K/W 1s
-4
0,0mJ 0C 50C 100C 150C
C 1 = 1 /R 1 C 2 = 2 /R 2
10s
100s
1ms
10ms 100ms
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=30A, RG=11, Dynamic test circuit in Figure E)
tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T)
Power Semiconductors
7
Rev. 2.4 Nov 09
SGP30N60HS SGW30N60HS
Ciss
VGE, GATE-EMITTER VOLTAGE
1nF
15V
120V 10V
480V
c, CAPACITANCE
Coss 100pF Crss
5V
0V 0nC
50nC
100nC
150nC
10pF
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT
SHORT CIRCUIT WITHSTAND TIME
300A 250A 200A 150A 100A 50A 0A 10V
15s
10s
5s
tSC,
0s 10V 11V 12V 13V 14V
12V
14V
16V
18V
VGE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C)
Power Semiconductors
8
Rev. 2.4 Nov 09
SGP30N60HS SGW30N60HS
PG-TO220-3-1
Power Semiconductors
9
Rev. 2.4 Nov 09
SGP30N60HS SGW30N60HS
Power Semiconductors
10
Rev. 2.4 Nov 09
SGP30N60HS SGW30N60HS
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
TC
Figure D. Thermal equivalent circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =60nH and Stray capacity C =40pF.
Power Semiconductors
11
Rev. 2.4 Nov 09
SGP30N60HS SGW30N60HS
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
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Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
12
Rev. 2.4 Nov 09

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