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| MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE CM1400DU-24NF IC ................................................................ 1400A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION UPS & General purpose inverters, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm A,B HOUSING Type (J. S. T. Mfg. Co. Ltd) A : VHR-2N B : VHR-5N Tc measured point (The side of Cu base plate) 150 137.50.25 42 14 14 Tc measured point (The side of Cu 12 2 base plate) 21 11 19 380.25 42.50.25 380.25 740.25 740.25 34.6 +1.0 -0.5 4 15.7 A G1 E1 G2 E2 C1 8-f6.5 MOUNTING HOLES PPS E2 C1 10.5 B 15.7 5.5 18 129.5 166 9-M6 NUTS 12 14 14 14 14 14 14 42 42 25.1 LABEL C2 C2E1 E2 C1 C1 CIRCUIT DIAGRAM Feb. 2009 1 G1 E1 E2 G2 C2E1 C2 1.9 0.2 34.6 +1.0 -0.5 MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature*4 Isolation voltage Torque strength Weight G-E Short C-E Short TC' = 94C*1 Pulse TC = 25C Pulse TC = 25C Conditions Ratings 1200 20 1400 2800 1400 2800 3900 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 1400 Unit V V A A W C C Vrms N*m N*m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) (chip) Parameter Collector cutoff current Test conditions VCE = VCES, VGE = 0V Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.22 Limits Typ. -- 7 -- 1.8 2.0 0.286 -- -- -- 7200 -- -- -- -- -- 90 -- -- -- 0.016 -- -- -- Max. 1 8 1.5 2.5 -- -- 220 25 4.7 -- 800 300 1000 300 700 -- 3.2 0.032 0.053 -- 0.014 0.023 2.2 Unit mA V A V m nF nC Gate-emitter threshold voltage IC = 140mA, VCE = 10V Gate leakage current Collector-emitter saturation voltage (without lead resistance) Module lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage (without lead resistance) Thermal resistance*3 Contact thermal resistance*2 Thermal resistance*1 VGE = VGES, VCE = 0V IC = 1400A, VGE = 15V Ic = 1400A, terminal-chip VCE = 10V VGE = 0V VCC = 600V, IC = 1400A, VGE = 15V VCC = 600V, IC = 1400A VGE = 15V RG = 0.22, Inductive load IE = 1400A (Note 4) Tj = 25C Tj = 125C R(lead) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) (chip) ns ns C V IE = 1400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied (1/2 module) Case temperature measured point is just under the chips (IGBT part) Case temperature measured point is just under the chips (FWDi part) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Rth(j-c')R RG K/W External gate resistance Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc') measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. *3 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING. *4 : The operation temperature is restrained by the permission temperature of female connector. Feb. 2009 2 MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 15V 2000 1500 1000 10V 500 8V 0 0 2 4 6 8 9V 10 0 0 4 8 12 13V Tj = 25C 2500 12V TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V 2800 COLLECTOR CURRENT IC (A) 2500 COLLECTOR CURRENT (A) 2000 1500 1000 500 Tj = 25C Tj = 125C 16 20 11V COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 15V Tj = 25C 4 8 3 6 IC = 1400A 4 IC = 2800A 2 IC = 560A 0 6 8 10 12 14 16 18 20 2 1 Tj = 25C Tj = 125C 0 0 500 1000 1500 2000 2500 2800 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) 104 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Cies 102 7 5 3 2 103 7 5 3 2 101 7 5 3 2 Coes Tj = 25C Tj = 125C 0 1 2 3 4 Cres VGE = 0V 102 100 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 Irr 7 5 3 2 SWITCHING TIMES (ns) trr 103 7 5 3 2 td(off) td(on) tf Conditions: VCC = 600V VGE = 15V RG = 0.22 Tj = 125C Inductive load 2 3 5 7 103 2 3 5 7 104 102 7 5 3 2 102 7 5 3 tr 2 101 2 10 101 2 10 Conditions: VCC = 600V VGE = 15V RG = 0.22 Tj = 125C Inductive load 2 3 5 7 103 2 3 5 7 104 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) EMITTER CURRENT IE (A) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 GATE-EMITTER VOLTAGE VGE (V) Single Pulse IGBT part: Per unit base = Rth(j-c') = 0.014K/ W FWDi part: Per unit base = Rth(j-c') = 0.023K/ W 100 7 5 3 2 7 5 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 1400A 16 VCC = 400V VCC = 600V 3 2 12 10-1 7 5 3 2 7 5 TC measured 3 point is just 2 under the chips 10-1 7 5 3 2 7 5 3 2 8 10-2 10-2 4 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) 0 0 2000 4000 6000 8000 10000 GATE CHARGE QG (nC) IC-ESW (TYPICAL) 103 7 5 3 2 RG-ESW (TYPICAL) 103 7 5 Eon, Eoff, Err (mJ/pulse) Eon, Eoff, Err (mJ/pulse) Eon Eoff Err Conditions: VCC = 600V VGE = 15V Tj = 125C IC = 1400A Inductive load 0 0.5 1 1.5 RG () Feb. 2009 3 2 102 7 5 3 2 Err Eoff Eon Conditions: VCC = 600V VGE = 15V Tj = 125C RG = 0.22 Inductive load 2 3 5 7 103 2 3 5 7 104 102 7 5 3 2 101 7 5 3 2 100 2 10 101 2 2.5 IC (A) 4 |
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