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NUS5531MT Main Switch Power MOSFET and Single Charging BJT
-12 V, -6.2 A, Single P-Channel FET with Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Package
This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and optimizing charging performance in battery-powered portable electronics.
Features
V(BR)DSS -12 V
http://onsemi.com MOSFET
RDS(on) TYP 32 mW @ -4.5 V 44 mW @ -2.5 V ID MAX -6.2 A
Low Vce(sat) PNP (Wall/USB)
VCEO MAX -20 V VEBO MAX -7.0 V IC MAX -2.0 A
* * * * * *
High Performance Power MOSFET Single Low Vce(sat) Transistor as Charging Power Mux 3.0x3.0x0.8 mm WDFN Package Independent Pin-out Provides Circuit Flexibility Low Profile (<0.8 mm) for Easy Fit in Thin Environments This is a Pb-Free Device
8 1
WDFN8 CASE 506BC
MARKING DIAGRAM
1 5531 AYWW G G
Applications
* Main Switch and Battery Charging Mux for Portable Electronics * Optimized for Commercial PMUs from Top Suppliers (See Figure 2)
5531 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
Emitter
1
8
Base
PIN ASSIGNMENT
Emitter 2 7 N/C Base NC Collector 3 6 Gate GATE Drain Source 4 (Top View) 5 Drain
8 7 6 5 9
10
Collector
1 2 3 4
Emitter Emitter Collector Source
Drain
(Bottom View)
Figure 1. Simple Schematic
ORDERING INFORMATION
Device NUS5531MTR2G Package WDFN8 (Pb-Free) Shipping 3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2008
July, 2008 - Rev. 1
Publication Order Number: NUS5531MT/D
NUS5531MT
P-Channel Power MOSFET Maximum Ratings (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State TA = 25C TA = 85C t5s Power Dissipation (Note 1) Steady State t 10 s Continuous Drain Current (Note 2) Steady State TA = 25C TA = 25C TA = 25C TA = 85C Power Dissipation (Note 3) Pulsed Drain Current Operating Junction and Storage Temperature Operating Case Temperature (Note 3) Source Current (Body Diode)2 TA = 25C tp = 10 ms PD IDM TJ, TSTG TC IS TL Symbol RqJA RqJA RqJA RqJA yJC PD ID Symbol VDSS VGS ID Value -12 8.0 -5.47 -4.0 -6.2 1.46 2.1 -4.4 -3.2 0.418 -25 -55 to 150 -55 to 125 -2.8 260 W A C C A C A W Units V V A
Lead Temperature for Soldering Purposes (1/8 from case for 10 s) THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - t < 10 s (Note 3) Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t < 10 s (Note 1) Junction-to-Case - t < 10 s (Note 3)
Max 299 81.4 85.5 58.7 26
Units C/W C/W C/W C/W C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 sq in [1 oz] including traces). 2. Surface-mounted on FR4 board using 0.5 in sq pad size, 1 oz. Cu. 3. Surface-mounted on FR4 board using 50 sq mm pad size, 1 oz. Cu.
P-Channel MOSFET Electrical Characteristics (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS VGS = -4.5 V, ID = -3.0 A VGS = -2.5 V, ID = -3.0 A Forward Transconductance VDS = -16 V, ID = -3.0 A 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% VGS = 0 V, ID = -250 mA ID = -250 mA, ref to 25C VGS = 0 V, VDS = -12 V TJ = 25C TJ = 125C -12.0 -10.1 -1.0 -10 200 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
VDS = 0 V, VGS = 8 V VGS = VDS, ID = -250 mA -0.45 -0.67 2.68 32 44 5.9
-1.1
V mV/C
40 50
mW
S
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NUS5531MT
P-Channel MOSFET Electrical Characteristics (TJ = 25C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage VSD trr ta tb QRR VGS = 0 V, IS = -1.0 A TJ = 25C TJ = 125C -0.66 -0.54 70.8 14.3 56.4 44 nC ns -1.2 V td(on) tr td(off) tf VGS = -4.5 V, VDD = -12 V, ID = -3.0 A, RG = 3.0 8 17.5 80 56.5 ns CISS COSS CRSS QG(tot) QG(th) QGS QGD VGS = -4.5 V, VDS = -12 V, ID = -3.0 A VGS = 0 V, f = 1.0 MHz, VDS = -12 V 1329 200 116 13 1.1 1.7 2.5 nC pF
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
VGS = 0 V, dISD/dt = 100 A/ms, IS = -1.0 A
Single-PNP Transistor Maximum Ratings (TJ = 25C unless otherwise stated)
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, Peak Operating Junction and Storage Temperature Power Dissipation, TA = 25C (Note 5) Thermal Resistance (Note 5) Power Dissipation, TA = 25C (Note 6) Thermal Resistance (Note 6) Symbol VCEO VCBO VEBO IC IC TJ, TSTG PD RqJA PD RqJA Value -20 -20 -7.0 -2.0 -4.0 -55 to 150 1.58 61.5 0.43 293 Units V V V A A C W C/W W C/W
5. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 sq in [1 oz] including traces) 6. Surface-mounted on FR4 board using 50 sq mm pad size, 1 oz. Cu.
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NUS5531MT
Single-PNP Transistor Electrical Characteristics (TJ = 25C unless otherwise stated)
Parameter OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain (Note 7) DC Current Gain (Note 7) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (Note 7) Base-Emitter Turn-On Voltage (Note 7) Cutoff Frequency (Note 8) Input Capacitance (Note 8) Output Capacitance (Note 8) hFE hFE VCE(sat) VCE(sat) VCE(sat) VBE(sat) VBE(on) fT Cibo Cobo IC = -1.0 A, VCE = -2.0 V IC = -2.0 A, VCE = -2.0 V IC = -1.0 A, IB = -0.01 A IC = -1.0 A, IB = -0.1 A IC = -2.0 A, IB = -0.2 A IC = -1.0 A, IB = -0.01 A IC = -1.0 A, IB = -2.0 A IC = -100 mA, VCE = -5.0 V f = 100 MHz VEB = -0.5 V, f = 1.0 MHz VCB = -3.0 V, f = 1.0 MHz 100 330 100 180 150 -0.10 -0.065 -0.13 -0.12 -0.09 -0.18 -0.9 -0.9 - - V V V V V MHz pF pF VbrCEO VbrCBO VbrEBO ICES IC = -10 mA, IB = 0 IC = -0.1 mA, IE = 0 IE = -0.1 mA, IC = 0 VCES = -15 V -20 -20 -7.0 -0.1 V V V mA Symbol Test Condition Min Typ Max Units
7. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% 8. Guaranteed by design but not tested.
from Wall/USB
1
8
CHR/USB_ctl
from Wall/USB
2
7
N/C
3 R_sns 4 Supply Voltage VDD
6
BAT_FET_N
5 Main Battery
Figure 2. Typical Application Circuit
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NUS5531MT
TYPICAL CHARACTERISTICS - MOSFET
-1.7 - -8.0 V
6 -ID, DRAIN CURRENT (A) 5 4 3 2 1 0
-1.6 V -ID, DRAIN CURRENT (A) -1.5 V
6 5 4 3 2 1 0 0.5
VDS -10 V
TJ = 25C
VGS = -1.4 V
TJ = 100C TJ = -55C
TJ = 25C 0 1 2 3 4 5 6
1.0
1.5
2.0
-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
-VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 3. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 4. Transfer Characteristics
0.05 VGS = 4.5 V TJ = 100C 0.04
0.05
TJ = 25C
VGS = -2.5 V
0.04
TJ = 25C 0.03 TJ = -55C 0.02
VGS = -4.5 V 0.03
1
2
3
4
5
6
0.02
1
2
3
4
5
6
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
Figure 5. On-Resistance vs. Drain Current
Figure 6. On-Resistance vs. Drain Current and Gate Voltage
1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.4 1.2 1.0 0.8 0.6 -50
ID = -3 A VGS = -4.5 V
10,000
VGS = 0 V TJ = 150C
-IDSS, LEAKAGE (nA)
1,000
TJ = 100C 100
-25
0
25
50
75
100
125
150
2
4
6
8
10
12
TJ, JUNCTION TEMPERATURE (C)
-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. On-Resistance Variation with Temperature http://onsemi.com
5
Figure 8. Drain-to-Source Leakage Current vs. Voltage
NUS5531MT
TYPICAL CHARACTERISTICS - MOSFET
VDS = 0 V
VGS = 0 V
2400 Ciss C, CAPACITANCE (pF) 2000 1600 1200 800 400 0 -4 -2 0 2 4 6 8 Crss Coss
TJ = 25C
5 4 3 2 1 0
VDS QT
10 8 VGS 6 4 ID = -3 A TJ = 25C 2 0 14
Ciss
Qgs
Qgd
10
12
0
2
4
6
8
10
12
-VGS -VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Capacitance Variation
1,000 VDD = -12 V ID = -3.0 A VGS = -4.5 V
Figure 10. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
10 -IS, SOURCE CURRENT (A)
VGS = 0 V
TJ = 25C
td(off) tf tr
t, TIME (ns)
100
1 TJ = 150C TJ = -55C
10
td(on)
0.1
1
1
10 RG, GATE RESISTANCE (W)
100
0.01
0
0.2
0.4
0.6
0.8
1.0
-VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 11. Resistive Switching Time Variation vs. Gate Resistance
100 -ID, DRAIN CURRENT (A)
Figure 12. Diode Forward Voltage vs. Current
Single Pulse TC = 25C 100 ms 1 ms 10 ms
10
1
Mounted on 2 sq. FR4 board (0.5 sq. 2 oz. Cu single sided) with MOSFET die operating.
0.1
RDS(on) Limit Thermal Limit Package Limit 0.1 1 10
dc
0.01
100
-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com
6
-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
-VGS, GATE-TO-SOURCE VOLTAGE (V)
2800
6
12
NUS5531MT
TYPICAL CHARACTERISTICS - MOSFET
1 RqJA, EFFECTIVE TRANSIENT THERMAL RESPONSE
D = 0.5 0.2
0.1
0.1 0.05 0.02
0.01 0.01
0.001
Single Pulse 1E-06 1E-05 1E-04 1E-03 1E-02 t, TIME (s) 1E-01 1E+00 1E+01 1E+02 1E+03
Figure 14. FET Thermal Response
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NUS5531MT
TYPICAL CHARACTERISTICS - BJT
0.25 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.2 25C 0.15 -55C 0.1 0.05 0 150C 0.35 IC/IB = 100 0.3 0.25 0.2 0.15 0.1 0.05 0 0.001 0.01 0.1 1.0 10 25C 150C
-55C
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 15. Collector Emitter Saturation Voltage vs. Collector Current
600 550 hFE, DC CURRENT GAIN 500 450 400 350 300 250 200 150 25C (5.0 V) 25C (2.0 V) -55C (5.0 V) -55C (2.0 V) 0.01 0.1 1.0 10 150C (5.0 V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 150C (2.0 V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4
Figure 16. Collector Emitter Saturation Voltage vs. Collector Current
IC/IB = 10
-55C 25C
150C
100 0.001
0.3 0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 17. DC Current Gain vs. Collector Current
1.0 VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.001 0.01 0.1 1.0 10 150C 1.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) -55C 25C 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
Figure 18. Base Emitter Saturation Voltage vs. Collector Current
VCE = -2.0 V
10 mA 100 mA
IC = 500 mA 300 mA
0 0.01
0.1
1.0
10
100
IC, COLLECTOR CURRENT (A)
IB, BASE CURRENT (mA)
Figure 19. Base Emitter Turn-On Voltage vs. Collector Current
Figure 20. Saturation Region
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NUS5531MT
TYPICAL CHARACTERISTICS - BJT
350 Cibo, INPUT CAPACITANCE (pF) 325 300 275 250 225 200 175 150 125 0 1.0 2.0 3.0 4.0 5.0 6.0 Cibo (pF) Cobo, OUTPUT CAPACITANCE (pF) 170 Cobo (pF) 150 130 110 90 70 50
0
2.0
4.0
6.0
8.0
10
12
14
16
VEB, EMITTER BASE VOLTAGE (V)
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 21. Input Capacitance
Figure 22. Output Capacitance
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NUS5531MT
PACKAGE DIMENSIONS
WDFN8, 3x3, 0.65P CASE 506BC-01 ISSUE A
D A L L1 DETAIL A
OPTIONAL CONSTRUCTIONS
B
L
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 D3 E E2 e G2 G3 K L L1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 3.00 BSC 1.00 1.20 0.95 1.15 3.00 BSC 1.70 1.90 0.65 BSC 0.15 BSC 0.20 BSC 0.20 --- 0.25 0.45 --- 0.15
2X
0.10 C
TOP VIEW
DETAIL B
(A3)
A
OPTIONAL CONSTRUCTIONS
0.05 C
8X
0.05 C
NOTE 4
SIDE VIEW G2 G3
A1
C
SEATING PLANE
0.10 C A B D2 1 4
0.10 C A B D3
8X L DETAIL A
E2 1.94 0.10 C A B e e/2 BOTTOM VIEW
0.10 C A B 0.05 C
NOTE 3
0.35
8X
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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CCCCCC CC CCCCCC CC
8X
K
8
5
8X
b
CCCCCC CC CCCCCC CC
EEE EEE EEE
DETAIL B
0.10 C
EEE EEE EEE
PIN ONE REFERENCE 2X
E
EXPOSED Cu
MOLD CMPD
SOLDERING FOOTPRINT*
2.60 1.30 1.20 1.15 0.55 8X
3.30
1
0.65 PITCH
DIMENSIONS: MILLIMETERS
NUS5531MT/D

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