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PD - 96227 IRFH3707PBF Applications l l l l HEXFET(R) Power MOSFET Synchronous Buck Converter for Computer Processor Power Isolated DC to DC Converters for Network and Telecom Buck Converters for Set-Top Boxes System/load switch VDSS 30V RDS(on) max Qg 12.4m:@VGS = 10V 5.4nC Benefits l l l l l l l Low RDS(ON) Very Low Gate Charge Low Junction to PCB Thermal Resistance Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260C Reflow) RoHS compliant (Halogen Free) D D D D S S S G 3mm x 3mm PQFN Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 20 12 9.4 29 96 2.8 1.8 0.02 -55 to + 150 Units V A g Power Dissipation g Power Dissipation c W W/C C Linear Derating Factor Operating Junction and g Storage Temperature Range Thermal Resistance Parameter RJC RJA RJA Junction-to-Case f Typ. --- --- --- Max. 7.5 45 31 Units C/W Junction-to-Ambient gh Junction-to-Ambient (t<10s) h ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 02/12/09 IRFH3707PBF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 30 --- --- --- 1.35 --- --- --- --- --- 17 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.02 9.4 14.5 1.8 -6.2 --- --- --- --- --- 5.4 1.1 0.7 2.2 1.5 2.9 3.8 2.0 7.8 10.2 8.7 9.7 755 171 83 --- --- 12.4 V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 12A m VGS = 4.5V, ID = 9.4A 17.9 2.35 V VDS = VGS, ID = 25A --- mV/C 1.0 VDS = 24V, VGS = 0V A VDS = 24V, VGS = 0V, TJ = 125C 150 100 VGS = 20V nA -100 VGS = -20V --- S VDS = 15V, ID = 9.4A e e 8.1 --- --- --- --- --- --- --- --- --- --- --- --- --- --- nC nC VDS = 15V VGS = 4.5V ID = 9.4A See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 9.4A RG=1.8 See Fig.15 VGS = 0V VDS = 15V = 1.0MHz ns pF Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current d Typ. --- --- Max. 13 9.4 Units mJ A Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 20 27 3.5 A 96 1.0 30 41 V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25C, IS = 9.4A, VGS = 0V TJ = 25C, IF = 9.4A, VDD = 15V di/dt = 200A/s e eA Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFH3707PBF 1000 TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 1000 TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 2.7V 1 2.7V Tj 60s PULSE WIDTH = 25C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 60s PULSE WIDTH 1 0.1 1 Tj = 150C 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 1.8 ID = 12A VGS = 10V ID, Drain-to-Source Current (A) 1.6 10 1.4 1.2 T J = 25C 1 TJ = 150C 1.0 VDS = 15V 60s PULSE WIDTH 0.1 1 2 3 4 5 6 0.8 0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFH3707PBF 10000 14.0 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd ID= 9.4A 12.0 10.0 8.0 6.0 4.0 2.0 0.0 VDS= 24V VDS= 15V C, Capacitance (pF) 1000 Ciss Coss 100 Crss 10 1 10 VDS, Drain-to-Source Voltage (V) 100 0 2 4 6 8 10 12 14 16 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD, Reverse Drain Current (A) 100 ID, Drain-to-Source Current (A) 100 100sec 10 10 T = 150C J TJ = 25C 1msec 1 T A = 25C Tj = 150C Single Pulse 0.1 10msec 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFH3707PBF 12 VGS(th) , Gate Threshold Voltage (V) 2.5 10 ID, Drain Current (A) 2.0 ID = 25A 1.5 8 6 4 1.0 2 0 25 50 75 100 125 150 T A , Ambient Temperature (C) 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10. Threshold Voltage Vs. Temperature 100 Thermal Response ( Z thJA ) C/W D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRFH3707PBF RDS(on), Drain-to -Source On Resistance (m ) 35 60 EAS , Single Pulse Avalanche Energy (mJ) ID = 12A 30 50 25 ID 2.95A 3.63A BOTTOM 9.40A TOP 40 20 T J = 125C 15 30 20 10 T J = 25C 5 2 4 6 8 10 12 14 16 18 20 10 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current 15V V DS V GS RD VDS L DRIVER RG V10V GS Pulse Width 1 s Duty Factor 0.1 D.U.T. + -V DD RG 20V D.U.T IAS tp + V - DD A 0.01 Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS I AS td(on) tr td(off) tf Fig 14b. Unclamped Inductive Waveforms Fig 15b. Switching Time Waveforms 6 www.irf.com IRFH3707PBF D.U.T Driver Gate Drive Period D= P.W. Period VGS=10V + P.W. + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50K 12V .2F .3F D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform www.irf.com 7 IRFH3707PBF PQFN Package Details Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRFH3707PBF PQFN Part Marking PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9 IRFH3707PBF Orderable part number IRFH3707TRPBF Package Type PQFN 3mm x 3mm Standard Pack Form Quantity Tape and Reel 4000 Note Qualification information Qualification level Cons umer (per JE DE C JE S D47F PQFN 3mm x 3mm guidelines ) MS L1 Moisture Sensitivity Level RoHS compliant (per IPC/JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.297mH, RG = 25, IAS = 9.4A. Pulse width 400s; duty cycle 2%. Rthjc is guaranteed by design. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Refer to application note #AN-994. Data and specifications subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/2009 10 www.irf.com |
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