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SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors DESCRIPTION *With TO-220C package *DARLNGTON *High DC current gain *Low collector saturation voltage *Complement to type TIP120/121/122 APPLICATIONS *Designed for general-purpose amplifier and low-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP125/126/127 ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER TIP125 VCBO Collector-base voltage TIP126 TIP127 TIP125 VCEO Collector-emitter voltage TIP126 TIP127 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -60 -80 -100 -60 -80 -100 -5 -5 -8 -120 65 2 150 -65~150 V A A mA W V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP125 VCEO(SUS) Collector-emitter sustaining voltage TIP126 TIP127 VCE(sat)-1 VCE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage TIP125 ICBO Collector cut-off current TIP126 TIP127 TIP125 ICEO Collector cut-off current TIP126 TIP127 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance IC=-3A ,IB=-12mA IC=-5A ,IB=-20mA IC=-3.0A ; VCE=-3V VCB=-60V, IE=0 VCB=-80V, IE=0 VCB=-100V, IE=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-3V IC=-3.0A ; VCE=-3V IE=0 ; VCB=-10V,f=0.1MHz IC=-0.1A, IB=0 CONDITIONS SYMBOL TIP125/126/127 MIN -60 -80 -100 TYP. MAX UNIT V -2.0 -4.0 -2.5 V V V -0.2 mA -0.5 mA -2 1000 1000 300 mA pF 2 SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE TIP125/126/127 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP125/126/127 4 |
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