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| ESD0P2RF... Bi-directional Ultra Low Capacitance TVS Diode * ESD / transient protection of RF signal lines according to: IEC61000-4-2 (ESD): 20kV (contact) IEC61000-4-4 (EFT): 40 A (5 / 50 ns) IEC61000-4-5 (Surge): 3 A (8 / 20 s) * Extremely small form factor down to 0.62 x 0.32 x 0.31 mm * Very low dynamic resistance * Max. working voltage: 5.3 V * Extremely low capacitance: 0.2 pF typ. * Very low reverse current < 1 nA typ. * Very low series inductance down to 0.2 nH typ. * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Applications * ESD protection of sensitive RF signal lines * RF antenna protection, frontend module * GPS, mobile TV, FM radio, RKE, UWB ESD0P2RF-02LRH ESD0P2RF-02LS 1 2 Type ESD0P2RF-02LRH ESD0P2RF-02LS Package TSLP-2-17 TSSLP-2-1 Configuration 1 line, bi-directional 1 line, bi-directional Marking T T 1 2010-04-12 ESD0P2RF... Maximum Ratings at TA = 25C, unless otherwise specified Parameter ESD contact discharge1), contact Peak pulse current (tp = 8 / 20 s)2) Operating temperature range Storage temperature 1V 2I Symbol VESD I pp T op T stg Value 20 3 -55...125 -55...150 Unit kV A C ESD according to IEC61000-4-2 pp according to IEC61000-4-5 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Characteristics Reverse working voltage Breakdown voltage I(BR) = 1 mA, from pin 2 to 1 I(BR) = 1 mA, from pin 1 to 2 Reverse current VR = 5.3 V Clamping voltage IPP = 1 A, tp = 8/20 s1) IPP = 3 A, tp = 8/20 s1) Diode capacitance VR = 0 V, f = 1 MHz VR = 0 V, f = 1 GHz Dynamic resistance ( tp=30ns ) Series inductance ESD0P2RF-02LS ESD0P2RF-02LRH 1I Symbol min. VRWM V(BR) 7 7 IR VCL CT RD LS -5.3 Values typ. <1 max. 5.3 50 Unit V nA V 11 15 0.23 0.2 1 0.2 0.4 17 21 pF 0.4 0.4 nH pp according to IEC61000-4-5 2 2010-04-12 ESD0P2RF... Clamping voltage, V cl = (Ipp) tp = 8 / 20 s 17 V Reverse current IR = (VR) TA = Parameter 10 -7 A 15 14 10 -8 +125C V cl IR 13 12 11 10 10 -9 +85C 10 -10 +25C 9 8 7 0 A 10 -11 1 2 4 10 -12 0 1 2 3 4 5 V VR 6.5 Ipp Diode capacitance CT = (VR) f = 1MHz 0.4 pF Line capacitance CT = (f) VR = Parameter 0.25 pF 0.3 0.23 CT CT 0.25 VR=0V 0.2 0.22 VR=3.3V VR=5.3V 0.15 0.21 0.1 0.2 0.05 0 0 1 2 3 4 V 6 0.19 0 500 1000 1500 2000 MHz 3000 VR f 3 2010-04-12 ESD0P2RF... Line capacitance CT = (TA) VR = Parameter, f = 1 MHz 1.5 pF 1.3 1.2 1.1 CT 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 -50 -25 0 25 50 75 C VR=5.3V VR=3.3V VR=0V 125 TA 4 2010-04-12 ESD0P2RF... Application example ESD0P2RF... 1 line, bi-directional Connector Protected line, signal level up to 5.3 V (bi-directional) I/O ESD sensitive device 2 The protection diode should be placed very close to the location where the ESD or other transients can occur to keep loops and inductances as small as possible. Pin 1 (or pin 2) should be connected directly to a ground plane on the board . 1 5 2010-04-12 Package TSLP-2-17 ESD0P2RF... Package Outline Top view 0.39 +0.01 -0.03 0.05 MAX. 0.65 0.05 Bottom view 0.6 0.05 2 2 1 1 Cathode marking 0.5 0.035 1) 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.35 0.45 0.3 0.925 1 0.275 0.275 0.375 0.6 Copper Solder mask 0.35 Stencil apertures Marking Layout (Example) BAR90-02LRH Type code Cathode marking Laser marking Standard Packing Reel o180 mm = 15.000 Pieces/Reel Reel o330 mm = 50.000 Pieces/Reel (optional) 4 1.16 0.5 Cathode marking 0.76 8 0.25 0.035 1) 10.05 6 2010-04-12 Package TSSLP-2-1 ESD0P2RF... 7 2010-04-12 ESD0P2RF... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2010-04-12 |
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