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Datasheet File OCR Text: |
Shantou Huashan Electronic Devices Co.,Ltd. NPN DARLINGTON TRANSISTOR HP142TS APPLICATIONS High DC Current Gain ABSOLUTE MAXIMUM RATINGSTa=25 Tstg----Storage Temperature.............................. -55~150 Tj----Junction Temperature.................................... 150 PC----Collector DissipationTc=25........................ 70W VCBO----Collector-Base Voltage................................. 100V VCEO----Collector-Emitter Voltage.............................. 100V VEBO ----Emitter-Base Voltage.................................... 5V IC----Collector CurrentDC.................................... 8A IB----Base Current...................................................0.5A TO-220 1BaseB 2CollectorC 3Emitter, E ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter-Base Cutoff Current Min Typ Max Unit Test Conditions BVCEO(SUS) ICEO ICBO IEBO HFE1 HFE2 VCE(sat1) VCE(sat2) VBE(sat) VBE(on) tD tR tS tF 100 2 1 2 1000 1000 2 3 3.5 3 0.15 0.55 2.5 2.5 V mA mA mA IC=30mA, IB=0 VCE=50V, IB=0 VCB=100V, IE=0 VEB=5V, IC=0 VCE=4V, IC=0.5A VCE=4V, IC=3A DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Base- Emitter On Voltage Deiay time Rise Time Storage Time Fall Time V V V V uS uS uS uS IC=5A, IB=10mA IC=10A, IB=40mA IC=10A, IB=40mA VCE=4V,IC=10A, Vcc=30V,Ic=5A IB1=20mA IB2=-20mA Shantou Huashan Electronic Devices Co.,Ltd. NPN DARLINGTON TRANSISTOR HP142TS |
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