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DMG4932LSD
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
* * * * * * * * * * * High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency Low On-Resistance Low Input Capacitance Fast Switching Speed Utilizes Diodes' Monolithic DIOFET Technology to Increase Conversion Efficiency 100% UIS and Rg Tested Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 8 Ordering Information: See Page 8 Weight: 0.072 grams (approximate)
NEW PRODUCT
Q1
Q2 D2
Diodes Schottky Integrated MOSFET
D2 D2 G1 S1
Top View Internal Schematic
G2 S2/D1 S2/D1 S2/D1
G1
D1
G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
Top View
Maximum Ratings - Q1 @TA = 25C unless otherwise specified
Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25C TA = 85C Symbol VDSS VGSS ID IDM Value 30 12 9.5 7.2 40 13 25.4 Unit V V A A A mJ
Pulsed Drain Current (Note 4) Avalanche Current (Notes 4 & 5) Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
IAR
EAR
Maximum Ratings - Q2 @TA = 25C unless otherwise specified
Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25C TA = 85C Symbol VDSS VGSS ID IDM Value 30 25 9.5 7.5 40 13 25.4 Unit V V A A A mJ
Pulsed Drain Current (Note 4) Avalanche Current (Notes 4 & 5) Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
IAR
EAR
Thermal Characteristics
Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25C (Note 3) Operating and Storage Temperature Range
Notes:
Symbol PD RJA TJ, TSTG
Value 1.19 107 -55 to +150
Unit W C/W C
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user's specific board design. 4. Repetitive rating, pulse width limited by junction temperature. 5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25C
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
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Electrical Characteristics - Q1 @TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD IS Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf Min 30 1.0 Typ 10 12 14 0.4 1932 154 121 2.68 18.1 42.0 4.5 4.0 6.16 7.22 36.76 5.38 Max 0.1 100 2.4 15 18 0.6 5 Unit V mA nA V m S V A pF pF pF nC nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = 1mA VDS = 30V, VGS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 1A -
NEW PRODUCT
Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (4.5V) Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 10V, ID = 9A
VGS = 10V, VDS = 15V, RG = 3, RL = 1.7
30
30
25
VGS = 4.5V
25
VGS = 4.0V VGS = 3.5V
VDS = 5V
ID, DRAIN CURRENT (A)
20
15
VGS = 3.0V
ID, DRAIN CURRENT (A)
20
15
VGS = 150C VGS = 125C
10
VGS = 2.5V
10
5
VGS = 2.0V VGS = 2.2V
5
VGS = 85C VGS = 25C VGS = -55C
0
0
0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic
2
0
0
0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic
3
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
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DMG4932LSD
RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.020 0.04
VGS = 4.5V
0.015
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.03
VGS = 4.5V
T A = 150C
0.010
VGS = 10V
0.02
TA = 125C T A = 85C TA = 25C TA = -55C
NEW PRODUCT
0.005
0.01
0 0
0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30
5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
30
RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
VGS = 4.5V ID = 5A
1.4
VGS = 10V ID = 10A
RDSON, DRAIN-SOURCE ON-RESISTANCE ()
1.6
0.03
0.02
VGS = 4.5V ID = 5A
1.2
1.0
0.01
VGS = 10V ID = 10A
0.8
0.6 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
0 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
3.0 VGS(TH), GATE THRESHOLD VOLTAGE (V) 30
Fig. 6 On-Resistance Variation with Temperature
2.5 IS, SOURCE CURRENT (A)
25
2.0
ID = 100mA
20
1.5
15
TA = 25C
1.0
10
0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
5
0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
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DMG4932LSD
100,000
10 VGS, GATE-SOURCE VOLTAGE (V)
IDSS, LEAKAGE CURRENT (A)
10,000
TA = 100C
8
1,000
TA = 85C
6
VDS = 15V ID = 9A
NEW PRODUCT
100
4
10
TA = 25C
2
1 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Leakage Current vs. Drain-Source Voltage 30
0
0
5
10 15 20 25 30 35 40 45 50 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics
10,000
f = 1MHz
C, CAPACITANCE (pF)
Ciss
1,000
Coss
100
Crss
10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Total Capacitance 30
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
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Electrical Characteristics - Q2 @TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf Min 30 1.0 Typ 12 16 8 0.65 675 98 90 1.6 7.8 16.0 1.9 2.6 5.05 9.21 20.76 4.94 Max 1 +100 -800 2.3 15.8 23 1.0 Unit V A nA V m S V pF pF pF nC nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = +25V, VDS = 0V VGS = -25V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 1A VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 10V, ID = 9A
NEW PRODUCT
Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (4.5V) Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
VGS = 10V, VDS = 15V, RG = 3, RL = 1.7
6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing.
30
VGS = 4.5V VGS = 4.0V VGS = 3.5V
30
25 ID, DRAIN CURRENT (A)
25 ID, DRAIN CURRENT (A)
VDS = 5V
20
VGS = 3.0V
20
15
15
VGS = 150C VGS = 125C VGS = 85C
10
VGS = 2.5V
10
5
VGS = 2.2V VGS = 2.0V
5
VGS = 25C VGS = -55C
0 0
0
0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristic
2
0
0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 13 Typical Transfer Characteristic
3
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
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DMG4932LSD
RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.020 0.04
VGS = 4.5V
0.015
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
VGS = 4.5V
0.03
TA = 150C T A = 125C
0.010
VGS = 10V
0.02
TA = 85C TA = 25C
NEW PRODUCT
0.005
0.01
T A = -55C
0 0
5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage
30
0
0
5
10 15 20 25 ID, DRAIN CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Temperature
30
RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
VGS = 4.5V ID = 5A
1.4
VGS = 10V ID = 10A
RDSON, DRAIN-SOURCE ON-RESISTANCE ()
1.6
0.03
0.02
VGS = 4.5V ID = 5A
1.2
1.0
0.01
VGS = 10V ID = 10A
0.8
0.6 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
0 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
Fig. 16 On-Resistance Variation with Temperature
Fig. 17 On-Resistance Variation with Temperature
30
3.0 VGS(TH), GATE THRESHOLD VOLTAGE (V)
2.5
IS, SOURCE CURRENT (A)
25
2.0
20
1.5
ID = 1mA
15
TA = 25C
1.0
ID = 250A
10
0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature
5
0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
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DMG4932LSD
100,000
10 VGS, GATE-SOURCE VOLTAGE (V)
IDSS, LEAKAGE CURRENT (nA)
8
10,000
T A = 150C
6
VDS = 15V ID = 9A
1,000
T A = 125C
4
NEW PRODUCT
100
T A = 85C
2
T A = 25C
10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Leakage Current vs. Drain-Source Voltage 30
0
0
5 10 15 Qg , TOTAL GATE CHARGE (nC) Fig. 21 Gate-Charge Characteristics
20
10,000
P(PK), PEAK TRANSIENT POWER (W)
f = 1MHz
10 9 8 7 6 5 4 3 2 1
1. DUT Mounted on 1 x MRP FR-4 Board 2. TJ = 150C, PD = 1.12W(DC) Single Pulse RJA = 113C/W RJA(t) = r(t) * RJA TJ - TA = P * RJA(t)
C, CAPACITANCE (pF)
1,000
Ciss
Coss
100
Crss
10
0
5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 22 Typical Total Capacitance
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
30
0 0.001
0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 23 Single Pulse Maximum Power Dissipation
0.1
D = 0.1 D = 0.05 D = 0.9 RJA (t) = r(t) * R JA RJA = 113C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2
D = Single Pulse
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 24 Transient Thermal Response
10
100
1,000
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
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Ordering Information (Note 8)
Part Number DMG4932LSD-13
Notes:
Case SO-8
Packaging 2500 / Tape & Reel
8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
(Top View)
NEW PRODUCT
8
5
Logo
G4932LD YY WW
Part no.
Xth week: 01 ~ 53 Year: "10" = 2010
1 4
Package Outline Dimensions
E1 E A1 L
Gauge Plane Seating Plane
Detail `A'
h 45 A2 A A3 e D b 7~9
Detail `A'
SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm
Suggested Pad Layout
X
0.254
C1 C2 Y
Dimensions X Y C1 C2
Value (in mm) 0.60 1.55 5.4 1.27
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
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IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
NEW PRODUCT
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
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