![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
2N3375 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3375 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region. PACKAGE STYLE TO- 60(ISOLATED) FEATURES INCLUDE: * Isolated Package MAXIMUM RATINGS IC VCE PDISS TJ TSTG JC O O 1.5 A 40 V 11.6 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 15 C/W O O O O 1 = EMITTER 2 = BASE 3 = COLLECTOR CHARACTERISTICS SYMBOL BVCEO BVCEX BVCBO ICEO IEBO hFE VCE(SAT) Cob ft Pout GP TC = 25 C O TEST CONDITIONS IC = 200 mA VBE = -1.5 V IC = 500 A VCE = 30 V VEB = 4.0 V VCE = 5.0 V IC = 500 mA VCB = 30 V VCE = 28 V VCE = 28 V IC = 150 mA Pin = 1.0 W IC = 250 mA IB = 100 mA f = 1.0 MHz f = 100 MHz f = 400 MHz IC = 100 mA MINIMUM TYPICAL MAXIMUM 40 65 65 100 100 10 1.0 10 500 3.0 4.8 40 UNITS V V V A A --V pF MHz W dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
Price & Availability of 2N3375
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |