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PD -95959
IRFH5106PbF
HEXFET(R) Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
60 5.6 50 1.4 100
V m nC A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25C)
Applications
* * * *
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Benefits Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Note
Features and Benefits
Features Low RDSon ( 5.6m) Low Thermal Resistance to PCB ( 0.5C/W) 100% Rg tested Low Profile ( 0.9 mm) results in Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Orderable part number IRFH5106TRPBF IRFH5106TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 1000
Absolute Maximum Ratings
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC(Bottom) = 25C ID @ TC(Bottom) = 100C IDM PD @TA = 25C PD @ TC(Bottom) = 25C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 60 20 21 17 100 63 400 3.6 114 0.029 -55 to + 150 Units V
A
g g
c
W W/C C
Linear Derating Factor Operating Junction and Storage Temperature Range
g
Notes through are on page 8
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03/12/10
IRFH5106PbF
Static @ TJ = 25C (unless otherwise specified)
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. 60 --- --- 2.0 --- --- --- --- --- 82 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.05 4.65 --- -8.5 --- --- --- --- --- 50 8.2 3.9 17 20.9 20.9 17 1.4 8.1 13 23 9.5 3090 460 205 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 5.6 m VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 250A --- mV/C 20 VDS = 60V, VGS = 0V A 250 VDS = 60V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V --- S VDS = 25V, ID = 50A 75 VDS = 30V --- VGS = 10V --- nC ID = 50A --- --- See Fig.17 & 18 --- --- nC VDS = 16V, VGS = 0V
e
--- --- --- --- --- --- --- --- Typ. --- ---
ns VDD = 60V, VGS = 10V ID = 50A RG=1.65 See Fig.15 VGS = 0V VDS = 25V = 1.0MHz Max. 96 50 Conditions MOSFET symbol showing the integral reverse
G S
pF
Avalanche Characteristics
EAS IAR
Diode Characteristics
IS ISM VSD trr Qrr ton
d
Min. --- --- Typ. --- ---
Units mJ A
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Max. Units 100 A 400
h
D
--- --- 1.3 V --- 28 42 ns --- 130 195 nC Time is dominated by parasitic Inductance
p-n junction diode. TJ = 25C, IS = 50A, VGS = 0V TJ = 25C, IF = 50A, VDD = 30V di/dt = 500A/s
e
eA
Thermal Resistance
RJC (Bottom) RJC (Top) RJA RJA (<10s) Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient
f f
Parameter
g g
Typ. --- --- --- ---
Max. 1.1 15 35 22
Units C/W
2
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IRFH5106PbF
1000
TOP VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V
1000
TOP VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
3.8V
1
3.8V
60s PULSE WIDTH
0.1 0.1 1 Tj = 25C 1 100 0.1 1 10
60s PULSE WIDTH
Tj = 150C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
Fig 2. Typical Output Characteristics
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 ID = 50A VGS = 10V
ID, Drain-to-Source Current (A)
100 T J = 150C T J = 25C 10
VDS = 25V 60s PULSE WIDTH 1.0 2 3 4 5 6 7 8
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 4. Normalized On-Resistance vs. Temperature
14.0 ID= 50A
VGS, Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0
C, Capacitance (pF)
VDS= 48V VDS= 30V VDS= 12V
10000 Ciss Coss 1000 Crss
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0
10
20
30
40
50
60
70
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRFH5106PbF
1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 100 1msec 100 TJ = 150C
ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A)
10
T J = 25C
10
10msec
1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)
Tc = 25C Tj = 150C Single Pulse 1 0 1
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
100
Fig 8. Maximum Safe Operating Area
4.0
VGS(th), Gate threshold Voltage (V)
Limited By Package 75
3.5
ID, Drain Current (A)
3.0
50
2.5
25
2.0
ID = 100A ID = 250A ID = 1.0mA ID = 1.0A
0 25 50 75 100 125 150 T C , Case Temperature (C)
1.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) C/W
Fig 10. Threshold Voltage vs. Temperature
1 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1
0.1
0.01
0.001 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH5106PbF
RDS(on), Drain-to -Source On Resistance (m )
14
400
EAS , Single Pulse Avalanche Energy (mJ)
ID = 50A
12
300
ID 6.1A 15A BOTTOM 50A TOP
10 T J = 125C 8
200
6
T J = 25C
100
4 4 6 8 10 12 14 16 18 20
0 25 50 75 100 125 150 Starting T J , Junction Temperature (C)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS tp
+ V - DD
A
I AS
0.01
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
VDS VGS RG V10V GS
Pulse Width 1 s Duty Factor 0.1
RD
90%
D.U.T.
+
VDS
-VDD
10%
VGS
td(on) tr td(off) tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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IRFH5106PbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Vds Vgs
Id
L
0
DUT 1K
S
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 17. Gate Charge Test Circuit
Fig 18. Gate Charge Waveform
6
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IRFH5106PbF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL RECTIFIER LOGO
DATE CODE ASSEMBLY SITE CODE
(Per SCOP 200-002)
PIN 1 IDENTIFIER
XXXX XYWWX XXXXX
PART NUMBER MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code)
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH5106PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information
Qualification level Moisture Sensitivity Level RoHS compliant Indus trial (per JE DE C JE S D47F PQFN 5mm x 6mm Yes

guidelines ) MS L1
(per JE DE C J-S T D-020D
)

Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.077mH, RG = 25, IAS = 50A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/2010
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