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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD951 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) *DC Current Gain: hFE= 40(Min)@ IC= 500mA *Complement to Type BD952 APPLICATIONS *Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 80 80 5 5 8 40 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 3.12 70 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(on) PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage CONDITIONS IC= 1mA ; IB= 0 IC= 1mA ; IE= 0 IE= 1mA ; IC= 0 IC= 2A; IB= 0.2A B BD951 MIN 80 80 5 TYP. MAX UNIT V V V 1.0 1.4 50 1.0 0.1 0.2 40 20 3 V V A mA mA mA IC= 2A; VCE= 4V VCB= 80V; IE= 0 ICBO Collector Cutoff Current VCB= 40V; IE= 0,TJ=150 ICEO IEBO hFE-1 hFE-2 fT Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product VCE= 40V; IB= 0 B VEB= 5V; IC= 0 IC= 500mA ; VCE= 4V IC= 2A ; VCE= 4V IC= 500mA ; VCE= 4V MHz Switching Times ton toff Turn-On Time Turn-Off Time 0.3 1.5 s s IC= 1.0A; IB1= -IB2= 0.1A; VCC= 20V; RL= 20 isc Websitewww.iscsemi.cn 2 |
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