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| APT2X61DC60J APT2X60DC60J ISOTOP(R) SiC Diode Power Module 2 3 VRRM = 600V IF = 60A @ TC = 100C Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers 2 3 1 4 Features Anti-Parallel Anti-Parallel APT2X60DC120J APT2X60DC60J 1 4 * Parallel Parallel APT2X61DC60J APT2X61DC120J 2 4 3 * * * Benefits SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration 1 ISOTOP(R) * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings (per leg) Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 s Max ratings 600 TC = 100C TC = 25C 60 750 Unit V A APT2X61_60DC60J - Rev 0 February, 2009 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APT2X61DC60J APT2X60DC60J All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics (per leg) Symbol Characteristic VF IRM QC C Diode Forward Voltage Maximum Reverse Leakage Current Total Capacitive Charge Total Capacitance Test Conditions Tj = 25C IF = 60A Tj = 175C Tj = 25C VR = 600V Tj = 175C IF = 60A, VR = 300V di/dt =1600A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Typ 1.6 2 300 600 84 390 300 Max 1.8 2.4 1200 6000 Unit V A nC pF Thermal and package characteristics (per leg) Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient (Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min Typ Max 0.45 20 175 300 1.5 Unit C/W V C N.m g Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 29.2 SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) 3 4 * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 1 Dimensions in Millimeters and (Inches) www.microsemi.com 2-3 APT2X61_60DC60J - Rev 0 February, 2009 2 APT2X61DC60J APT2X60DC60J Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 1200 IR Reverse Current (A) 1000 800 600 400 200 0 200 TJ=25C TJ=175C 120 TJ=25C IF Forward Current (A) 90 TJ=75C TJ=175C 60 TJ=125C TJ=125C TJ=75C 30 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 300 400 500 600 700 800 VR Reverse Voltage (V) 2500 C, Capacitance (pF) 2000 1500 1000 500 0 APT2X61_60DC60J - Rev 0 February, 2009 1 10 100 VR Reverse Voltage 1000 ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 |
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