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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1414-10LA-252 TECHNICAL DATA FEATURES HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz HIGH GAIN G1dB=5.5dB at 13.75GHz to 14.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current SYMBOL P1dB G1dB IDS1 G ( Ta= 25C ) UNIT dBm dB A dB % dBc A C MIN. 39.0 4.5 -42 TYP. MAX. 39.5 5.5 4.0 18 -45 4.0 5.0 0.8 5.0 90 CONDITIONS VDS= 9V f= 13.75 to 14.5GHz add IM3 IDS2 Two-Tone Test Po=29.0 dBm (Single Carrier Level) Channel Temperature Rise Tch VDS X IDS X Rth(c-c) Recommended gate resistance(Rg) : Rg= 100 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25C ) UNIT mS V A V C/W MIN. -2.0 -5 TYP. 2800 -3.5 10.0 2.0 MAX. -5.0 2.5 CONDITIONS VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS=0V IGS= -145A Channel to Case gm VGSoff IDSS VGSO Rth(c-c) The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Sep. 2003 TIM1414-10LA-252 ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 11.5 60 175 -65 to +175 PACKAGE OUTLINE (2-11C1B) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM1414-10LA-252 RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=9V 41 40 39 38 37 IDS4.0A Pin=34.0dBm 13.75 14.0 14.25 14.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 43 freq.=14.5GHz 42 41 40 VDS=9V IDS4.0A Pout 50 40 Pout(dBm) 38 37 36 35 34 27 29 31 33 35 37 30 add 20 10 Pin(dBm) 3 add(%) 39 TIM1414-10LA-252 Power Dissipation(PT) vs. Case Temperature(Tc) 60 PT(W) 30 0 0 40 80 Tc( C ) 120 160 200 IM3 vs. Output Power Characteristics -10 VDS=9V -20 freq.=14.5GHz f=5MHz -30 IM3(dBc) -40 -50 -60 24 26 28 30 32 34 Pout(dBm) @Single carrier level 4 |
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