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| SFH640 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, 300 V BVCEO FEATURES * Good CTR linearity with forward current A C NC i179004 1 2 3 6B 5C 4E * Low CTR degradation * Very high collector emitter breakdown voltage, BVCER = 300 V * Isolation test voltage: 5300 VRMS * Low coupling capacitance * High common mode transient immunity * Phototransistor optocoupler 6 pin DIP package with base connection DESCRIPTION The SFH 640 is an optocoupler with very high BVCER, a minimum of 300 V. It is intended for telecommunications applications or any DC application requiring a high blocking voltage. * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS * UL1577, file no. E52744 system code H or J, double protection * DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 * CSA 93751 * BSI IEC 60950; IEC 60065 ORDER INFORMATION PART SFH640-1 SFH640-2 SFH640-3 SFH640-2X007 SFH640-3X007 SFH640-3X009 Note For additional information on the available options refer to option information. REMARKS CTR 40 to 80 %, DIP-6 CTR 63 to 125 %, DIP-6 CTR 100 to 200 %, DIP-6 CTR 63 to 125 %, SMD-6 (option 7) CTR 100 to 200 %, SMD-6 (option 7) CTR 100 to 200 %, SMD-6 (option 9) ABSOLUTE MAXIMUM RATINGS PARAMETER INPUT Reverse voltage DC forward current Surge forward current Total power dissipation OUTPUT Collector emitter voltage Collector base voltage Emitter base voltage Collector current Surge collector current Total power dissipation (1) TEST CONDITION SYMBOL VR IF VALUE 6.0 60 2.5 100 300 300 7.0 50 100 300 UNIT V mA A mW V V V mA mA mW tp 10 s IFSM Pdiss VCE VCBO VEBO IC tp 10 ms IC Pdiss Document Number: 83682 Rev. 1.3, 01-Dec-05 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 1 SFH640 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, 300 V BVCEO ABSOLUTE MAXIMUM RATINGS PARAMETER COUPLER Isolation test voltage between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74 Isolation resistance Insulation thickness between emitter and detector Creepage distance Clearance distance Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Storage temperature range Operating temperature range Soldering temperature (2) max. 10 s, dip soldering: distance to seating plane 1.5 mm CTI Tstg Tamb Tsld VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C VISO RIO RIO 5300/7500 1012 1011 0.4 7 7 175 - 55 to + 150 - 55 to + 100 260 C C C VRMS/VPK mm mm mm (1) TEST CONDITION SYMBOL VALUE UNIT Notes (1) T amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS PARAMETER INPUT Forward voltage Reverse voltage Reverse current Capacitance Thermal resistance OUTPUT Collector emitter breakdown voltage Voltage emitter base Collector emitter capacitance Collector base capacitance Emitter base capacitance Thermal resistance COUPLER Coupling capacitance Saturation voltage collector emitter Collector emitter leakage current IF = 10 mA, IC = 2.0 mA IF = 10 mA, IC = 3.2 mA IF = 10 mA, IC = 5.0 mA VCE = 200 V, RBE = 1.0 M SFH640-1 SFH640-2 SFH640-3 CC VCEsat VCEsat VCEsat ICER 0.6 0.25 0.25 0.25 1.0 0.4 0.4 0.4 100 pF V V V nA ICE = 1.0 mA, RBE = 1.0 M IEB = 10 A VCE = 10 V, f = 1.0 MHz VCB = 10 V, f = 1.0 MHz VEB = 5.0 V, f = 1.0 MHz BVCER BVBEO CCE CCB CEB Rthja 300 7.0 7.0 8.0 38 250 V V pF pF pF K/W IF = 10 mA IR = 10 A VR = 6.0 V VF = 0 V, f = 1.0 MHz VV VR IR CO Rthja 6.0 0.01 25 750 10 1.1 1.5 V V A pF K/W TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Note Tamb = 25 C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. www.vishay.com 2 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83682 Rev. 1.3, 01-Dec-05 SFH640 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection, 300 V BVCEO CURRENT TRANSFER RATIO PARAMETER TEST CONDITION IF = 10 mA, VCE = 10 V IF = 1.0 mA, VCE = 10 V Current transfer ratio IF = 10 mA, VCE = 10 V IF = 1.0 mA, VCE = 10 V IF = 10 mA, VCE = 10 V IF = 1.0 mA, VCE = 10 V PART SFH640-1 SFH640-1 SFH640-2 SFH640-2 SFH640-3 SFH640-3 SYMBOL IC/IF IC/IF IC/IF IC/IF IC/IF IC/IF MIN. 40 13 63 22 100 34 70 45 200 30 125 TYP. MAX. 80 UNIT % % % % % % SWITCHING CHARACTERISTICS PARAMETER Turn-on time Rise time Turn-off time Fall time TEST CONDITION IC = 2.0 mA, RL = 100 , VCC = 10 V IC = 2.0 mA, RL = 100 , VCC = 10 V IC = 2.0 mA, RL = 100 , VCC = 10 V IC = 2.0 mA, RL = 100 , VCC = 10 V SYMBOL ton tr toff tf MIN. TYP. 5.0 2.5 6.0 5.5 MAX. UNIT s s s s TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified 100 80 60 VCC IC VCE = 10 V1 normalized to IF = 10 mA, NCTR = f (IF) NCTR IF RL 50 30 10 47 0 10-4 iSFH640_01a 10-3 IF/A 10-2 10-1 iSFH640_02 Fig. 1 - Switching Times Measurement Test Circuit and Waveform Fig. 3 - Current Transfer Ratio (Typ.) 1.2 V I/F Input Pulse VF = f (IF, TA) 1.1 25 C 50 C 75 C 10% 90% tr ton tf t off Output Pulse 1.0 0.9 10-1 5 100 5 101 IF 5mA 102 iSFH640_01b iSFH640_03 Fig. 2 - Switching Times Measurement Test Circuit and Waveform Fig. 4 - Diode Forward Voltage (Ttyp.) Document Number: 83682 Rev. 1.3, 01-Dec-05 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 3 SFH640 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, 300 V BVCEO 20 17.5 15 ICE/mA 12.5 10 7.5 5 2.5 0 10-2 iSFH640_04 10-6 ICE = f(VCE, IB) 10-7 /B = 100 A /B = 80 A /B = 60 A /B = 40 A /B = 20 A 10-1 VCE/V 100 102 101 Ptot/mW 10-8 10-9 IF = 0, RBE = 1.0 MW, ICER = f(VCE) 10-10 10-11 10-12 0 iSFH640_07 25 50 75 100 125 150 175 200 VCE/V Fig. 5 - Output Characteristics (Typ.) Fig. 8 - Collector-Emitter Leakage Current (Typ.) 30 ICE = f(VCE, IF) 25 20 15 10 5 0 10-2 iSFH640_05 100 90 80 /F = 20mA IF/mA /F = 16mA /F = 14mA /F = 12mA /F = 10mA 10-1 VCE/V 100 101 102 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 TA/ C IF = f (TA) ICE/mA iSFH640_08 Fig. 6 - Output Characteristics (Typ.) Fig. 9 - Permissible Loss Diode 100 90 80 70 CXX/pF 60 50 40 30 20 10 0 10-2 iSFH640_06 CEB f = 1.0 MHz, ICE = f(VCE) CCB = f(VCB), CEB = f(VEB) Ptot/mW 400 350 300 250 200 150 100 Transistor PIOT = f (TA) CCB CCE 10-1 100 VXX/V 101 102 50 0 0 iSFH640_09 Diode 10 20 30 40 50 60 70 80 90 100 TA/ C Fig. 7 - Transistor Capacitances (Typ.) Fig. 10 - Permissible Power Dissipation www.vishay.com 4 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83682 Rev. 1.3, 01-Dec-05 SFH640 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection, 300 V BVCEO PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 Pin one ID 0.248 (6.30) 0.256 (6.50) 4 5 6 ISO method A 0.335 (8.50) 0.343 (8.70) 0.039 (1.00) min. 0.048 (0.45) 0.300 (7.62) typ. 0.022 (0.55) 0.130 (3.30) 0.150 (3.81) 4 typ. 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.022 (0.55) 0.100 (2.54) typ. i178004 18 0.114 (2.90) 0.130 (3.0) 3 to 9 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81) 0.035 (0.90) Option 7 0.300 (7.62) typ. Option 9 0.375 (9.53) 0.395 (10.03) 0.300 (7.62) ref. 0.028 (0.7) min. 0.180 (4.6) 0.160 (4.1) 0.315 (8.0) min. 0.331 (8.4) min. 0.406 (10.3) max. 0.0040 (0.102) 0.0098 (0.249) 0.020 (0.51) 0.040 (1.02) 0.315 (8.00) min. 0.012 (0.30) typ. 15 max. 18494 Document Number: 83682 Rev. 1.3, 01-Dec-05 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 5 SFH640 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, 300 V BVCEO OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83682 Rev. 1.3, 01-Dec-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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