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| Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864. Dimensions (Unit : mm) 2SB1184 1.50.3 6.50.2 5.1 +0.2 -0.1 C0.5 2.3 +0.2 -0.1 0.50.1 4.40.2 1.05 2SB1243 6.80.2 2.50.2 5.5 +0.3 -0.1 0.9 0.550.1 2.30.2 2.30.2 1.00.2 (1) (2) (3) 2.54 2.54 0.50.1 14.50.5 Structure Epitaxial planar type PNP silicon transistor 9.50.5 0.9 1.5 2.5 0.75 0.650.1 0.65Max. 1.0 0.9 (1) (2) (3) 0.450.1 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : ATV (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SB1184 dissipation 2SB1243 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -60 -50 -5 -3 1 15 1 150 -55 to 150 Unit V V V A (DC) W W (TC=25C) W C C 1 1 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -60 -50 -5 - - - 120 - - Typ. - - - - - - - 70 50 Max. - - - -1 -1 -1 390 - - Unit V V V A A V - MHz pF IC= -50A IC= -1mA IE= -50A VCB= -40V VEB= -4V IC/IB= -2A/ -0.2A VCE= -3V, IC= -0.5A VCE= -5V, IE=0.5A, f=30MHz VCB= -10V, IE=0A, f=1MHz Conditions www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.C 2SB1184 / 2SB1243 Packaging specifications and hFE Package Code Type 2SB1184 2SB1243 hFE QR QR - Basic ordering unit (pieces) TL 2500 Taping TV2 2500 - Data Sheet hFE values are classified as follows : Item hFE Q 120 to 270 R 180 to 390 Electrical characteristic curves -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) -2.5 -2.0 -1.5 -1.0 COLLECTOR CURRENT : IC (A) -5 -2 -1 -0.5 -0.2 -0.1 Ta=100C 25C -25C VCE= -3V -3.0 -50mA -45mA -40mA -35mA -30mA -25mA Tc=25C -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0 IB=-5mA -50mA -45mA -40mA -35mA -30mA -25mA -20mA -15mA -10mA Tc=25C -20mA -15mA -10mA -0.05 -0.02 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 BASE TO EMITTER VOLTAGE : VBE (V) -5mA -0.5 0 0 PC=15W -10 -20 IB=0mA -30 -40 -50 -1 -2 -3 IB=0mA -4 -5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( ) Fig.3 Grounded emitter output characteristics ( ) 1000 500 DC CURRENT GAIN : hFE Ta=25C 1k 500 DC CURRENT GAIN : hFE VCE= -3V Ta=100C 25C -25C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -10 -5 -2 -1 -0.5 -0.2 -0.1 IC/IB=50/1 20/1 10/1 Ta=25C 200 100 50 VCE=-5V 200 100 50 20 10 5 2 -3V 20 10 5 2 1 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -0.05 -0.02 1 -0.01 -0.02 -0.05 -0.1-0.2 -0.5 -1 -2 -5 -10 -0.01 -0.01 -0.02 -0.05-0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs.collector current -10 1000 TRANSITION FREQUENCY : fT (MHz) lC/lB=10 Ta= -25C 25C 100C COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 Ta=100C 25C -25C VCE(sat) VBE(sat) 500 200 100 50 20 10 5 2 1 1 2 5 10 20 Ta=25C VCE= -5V 1000 500 200 100 50 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 Ta=25C f=1MHz IE=0A -5 -10 50 100 200 500 1000 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector base voltage www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.C 2SB1184 / 2SB1243 Data Sheet -10.0 COLLECTOR CURRENT : IC (A) -10.0 -5.0 IC Max. (Pulse) COLLECTOR CURRENT : IC (A) -2.0 -1.0 -0.5 Ta=25C Single nonrepetitive pulse s 0m =1 Pw s 0m 10 DC C DC -0.2 -0.1 -0.05 -0.02 -0.01 -0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50-100 -50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operation area (2SB1184) Fig.11 Safe operation area (2SB1243) www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.02 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2010 ROHM Co., Ltd. All rights reserved. R1010A |
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