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| SGM2306A Elektronische Bauelemente 5A, 30V,RDS(ON) 35m[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SGM2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2306A is universally used for all commercialindustrial surface mount applications. SOT-89 Features * Lower On-Resistance * Capable Of 2.5V Gate drive D REF. A B C D E F G Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M S Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V Continuous Drain Current, VGS @4.5V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 C o ID@TA=70 C o Ratings 30 12 5.0 4.0 20 Unit V V A A A W W / oC o IDM PD@TA=25 C o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 1.5 0.012 Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 83.3 Unit o C/W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SGM2306A Elektronische Bauelemente 5A, 30V,RDS(ON) 35m[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 30 _ Typ. _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=5A o 0.1 _ _ _ _ _ _ _ _ _ 0.5 _ _ _ _ 1.2 100 1 25 30 35 50 90 15 _ _ Static Drain-Source On-Resistance _ RDS(ON) _ _ m [ VGS=4.5V, ID=5 A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1 A ID=5A VDS=16V VGS= 4.5V Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ 8.5 1.5 3.2 6 20 20 3 660 90 70 13 nC _ _ _ _ VDD=15V ID=5A nS VGS=10V RG=3.3[ RD=3 [ 1050 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=5V, ID=5A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time2 Reverse Recovery Change Symbol VSD Trr Min. _ _ Typ. _ Max. 1.2 _ _ Unit V nS nC Test Condition IS=1.2A, VGS=0V. IS=5A, VGS=0V. dl/dt=100A/us 14 7 Qrr _ Notes: 1. Pulse width limited by Max. junction temperature. 300us, dutycycleO2%. 2.Pulse widthO 3.Surface mounted on FR4 board, t O 10sec. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SGM2306A Elektronische Bauelemente 5A, 30V,RDS(ON) 35m[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature http://www.SeCoSGmbH.com/ Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SGM2306A Elektronische Bauelemente 5A, 30V,RDS(ON) 35m[ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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