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| HUR6030PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H J K Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode HUR6030PT VRSM V 300 VRRM V 300 L M N Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=145oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=3A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 2 x 30 300 1.2 0.3 -55...+175 175 -55...+150 165 0.8...1.2 6 Unit A A mJ A o C W Nm g HUR6030PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 250 1 0.91 1.25 0.9 0.25 Unit uA mA V K/W ns IR VF RthJC RthCH trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C o 30 7 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR6030PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 60 A IF 40 TVJ=150C TVJ=100C TVJ= 25C 20 200 5 0 0.0 0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt 10 400 Qr 800 TVJ = 100C nC 600 IF = 60A IF = 30A IF = 15A 15 VR = 150V IRM 20 IF = 60A IF = 30A IF = 15A 30 A 25 TVJ = 100C VR = 150V 0.5 1.0 VF V 1.5 Fig. 1 Forward current IF versus VF 1.4 Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 ns TVJ = 100C VR = 150V Fig. 3 Peak reverse current IRM versus -diF/dt 14 V VFR 12 tfr 0.8 VFR 0.6 10 0.4 0.2 8 0.0 600 A/us 1000 800 diF/dt TVJ = 100C IF = 30A 1.2 us 1.0 tfr 1.2 Kf 1.0 IRM trr 80 70 IF = 60A 60 Qr IF = 30A IF = 15A 0.8 0.6 50 0.4 0 40 80 120 C 160 TVJ 40 0 200 400 600 -diF/dt 800 A/us 1000 0 200 400 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.465 0.179 0.256 ti (s) 0.005 0.0003 0.04 0.1 ZthJC 0.01 1 2 3 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case |
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