 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SBP13007-O High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA B General Description This device is designed for high voltage, High speed switching characteristics required such as lighting system ,switching mode power supply. C E TO220 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25 Total Dissipation at Ta = 25 Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 8.0 16 4.0 8.0 80 2.05 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RJc RJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.56 62.5 Units /W /W Jan 2008. Rev. 0 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T01-3 SBP13007-O Electrical Characteristics (TC=25 unless otherwise noted) Value Parameter Collector-Emitter Breakdown Voltage Test Conditions Ic=10mA,Ib=0 Ic=2.0A,Ib=0.4A Ic=5.0A,Ib=1.0A VCE(sat) Collector-Emitter Saturation Voltage Ic=8.0A,Ib=2.0A Ic=5.0A,Ib=1.0A Tc=100 Ic=2.0A,Ib=0.4A VBE(sat) Base-Emitter Saturation Voltage Ic=5.0A,Ib=1.0A Ic=5.0A,Ib=1.0A Tc=100 ICBO Collector-Base Cutoff Current (Vbe=-1.5V) DC Current Gain Resistive Load ts tf Storage Time Fall Time Inductive Load ts tf Storage Time Fall Time Inductive Load ts tf Storage Time Fall Time Vcb=700V Vcb=700V, Tc=100 Vce=5V,Ic=2.0A Vce=5V, Ic=5.0A VCC=125V , IB1=1.0A , Tp=25 Ic=5.0A IB2=-1.0A 10 5 1.5 0.17 3.0 0.4 1.0 5.0 40 40 mA 1.2 1.6 1.5 V Min 400 Typ Max 1.0 2.0 3.0 2.5 V V Symbol VCEO(sus) Units V V hFE VCC=15V ,Ic=5A IB1=1.0A , IB2=-2.5A L=0.35mH,Vclamp=300V VCC=15V ,Ic=1A IB1=0.4A , IB2=-1.0A L=0.35mH,Vclamp=300V Tc=100 - 0.8 0.06 2.0 0.12 - 1.0 0.07 3.0 0.15 Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13007-O Fig. 1 DC Current Gain Fig. 2 Collector-Emitter Saturation Voltage Fig. 3 Base--Emitter Saturation Voltage Fig. 4 Safe Operation Area Fig.5 Power Derating Fig.6 Reverse Biased Safe Operation Area 3/5 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13007-O Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13007-O TO-220 Package Dimension Unit:mm 5/5 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. |
Price & Availability of SBP13007-O
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |