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RB551V-30
Diodes
Schottky barrier diode
RB551V-30
Applications High frequency rectification External dimensions (Unit : mm)
1.250.1 0.10.1 0.05
Land size figure (Unit : mm)
0.9MIN.
Features 1) Small mold type. (UMD2) 2) Low VF. 3) High reliability.
0.8MIN.
1.70.1
2.50.2
UMD2
Construction Silicon epitaxial planar
Structure
0.30.05 0.70.2 0.1
ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory)
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.550.05 1.750.1 0.30.1
3.50.05
8.00.2
1.400.1
4.00.1
1.05 1.00.1
Absolute maximum ratings (Ta = 25C)
Param eter R evers e voltage (repetitive peak) R evers e voltage (DC) Average rectified forward current Forward current s urge peak (60Hz 1cyc Junction tem perature S torage tem perature Sym bol VRM VR Io IFSM Tj Ts tg Lim its 30 20 500 2 125 -40 to +125 Unit V V mA A
Electrical characteristics (Ta = 25C)
Param eter Forward voltage Revers e current Sym bol VF 1 VF 2 IR Min. Typ. Max. 0.36 0.47 100 Unit V V A IF =100m A IF =500m A VR =20V Conditions
2.75
2.80.1
Rev.C
2.1
1/3
RB551V-30
Diodes
Electrical characteristic curves (Ta = 25C)
1000 Ta=125 100000 Ta=125 100 f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
100
Ta=75 Ta=25
1000 100 10
Ta=75
10 Ta=-25 1
Ta=25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
30
10000
10
Ta=-25 1 0.1
0.1 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
1 0 10 20 0 10 20 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
450
200
80
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
440 430 420 410 AVE:420.4mV 400
160 140 120 100 80 60 40 20 0 AVE:42.7uA
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=25 IF=500mA n=30pcs
180
Ta=25 VR=20V n=30pcs
70
Ta=25 f=1MHz VR=0V n=10pcs
60
50 AVE:59.5pF 40
VF DISPERSION MAP
IR DISPERSIPN MAP
Ct DISPERSION MAP
20
100
100 Ifsm 8.3ms 8.3ms 1cyc
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 15
1cyc 8.3ms
Ifsm
t
10
10
10
5 AVE:8.60A 0
1 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS
1000
0.5 Rth(j-a) 0.4 D=1/2 DC
0.5 0.4
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
100
Rth(j-c)
Mounted on epoxy board IM=1mA IF=10mA
0.3 0.2 0.1 0
REVERSE POWER DISSIPATION:PR (W)
FORWARD POWER DISSIPATION:Pf(W)
Sin(180)
0.3 Sin(180) 0.2 DC 0.1 0 D=1/2
10
1ms time
300us
1 0.001
0.1
10
1000
0
0.2
TIME:t(s) Rth-t CHARACTERISTICS
0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS
1
0
5
10
15
20
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
Rev.C
2/3
RB551V-30
Diodes
Io t T D=1/2 VR D=t/T VR=15V Tj=125
0A 0V 1 0.9
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
1 DC 0A 0V Io t T VR D=t/T VR=15V Tj=125 0.9
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
DC
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Sin(180)
D=1/2
Sin(180) 25 50 75 100 125
0 0 25 50 75 100 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 125
AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
Rev.C
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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