View FGH75N60UF_4879777.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FGH75N60UF 600V, 75A Field Stop IGBT
April 2009
FGH75N60UF
600V, 75A Field Stop IGBT
Features
* High Current Capability * Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A * High Input Impedance * Fast Switching * RoHS Compliant
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild's new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Applications
* Induction Heating, UPS, SMPS, PFC
E
C G
COLLECTOR (FLANGE)
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C
o o
Ratings
600 20 150 75 225 452 181 -55 to +150 -55 to +150 300
Units
V V A A A W W
o o o
C C C
Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
0.276 40
Units
o o
C/W C/W
(c)2009 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGH75N60UF Rev. A1
FGH75N60UF 600V, 75A Field Stop IGBT
Package Marking and Ordering Information
Device Marking
FGH75N60UF
Device
FGH75N60UFTU
Package
TO-247
Packaging Type
Tube
Max Qty Qty per Tube
30ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES TJ ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
600 -
0.75 -
250 400
V V/oC A nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 75A, VGE = 15V IC = 75A, VGE = 15V, TC = 125oC 4.0 5.0 1.9 2.15 6.5 2.4 V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 3850 375 147 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 75A, VGE = 15V VCC = 400V, IC = 75A, RG = 3, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 75A, RG = 3, VGE = 15V, Inductive Load, TC = 25oC 27 70 128 30 3.05 1.35 4.4 27 74 153 35 3.6 1.8 5.4 250 30 130 80 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGH75N60UF Rev. A1
2
www.fairchildsemi.com
FGH75N60UF 600V, 75A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
225
TC = 25 C
o
Figure 2. Typical Output Characteristics
225
TC = 125 C
o
Collector Current, IC [A]
10V
Collector Current, IC [A]
180
20V
15V 12V
20V
15V 12V 10V
180
135
135
90
VGE = 8V
90
VGE = 8V
45
45
0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6
0 0.0
1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V]
6.0
Figure 3. Typical Saturation Voltage Characteristics
225
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
225
Collector Current, IC [A]
Collector Current, IC [A]
180
TC = 25 C TC = 125 C
o
o
100
Common Emitter VCE = 20V TC = 25 C TC = 125 C
o o
135
90
10
45
0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4
1 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
3.6
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = -40 C
o
3.0
150A
16
12
2.4
75A
8
1.8
IC = 40A
4
75A IC = 40A
150A
1.2 25
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGH75N60UF Rev. A1
3
www.fairchildsemi.com
FGH75N60UF 600V, 75A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = 25 C
o
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Collector-Emitter Voltage, VCE [V]
16
16
12
12
8
150A
8
75A IC = 40A 150A
4
75A IC = 40A
4
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
Figure 9. Capacitance Characteristics
8000
Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
Figure 10. Gate charge Characteristics
15
Common Emitter
o
Gate-Emitter Voltage, VGE [V]
TC = 25 C
6000
Capacitance [pF]
12
200V VCC = 100V 300V
Cies
9
4000
Coes
6
2000
Cres
3
0 1 10 Collector-Emitter Voltage, VCE [V]
30
0 0 50 100 150 200 Gate Charge, Qg [nC] 250
Figure 11. SOA Characteristics
500
10s
Figure 12. Load Current vs. Frequency
140
VCC = 400V load Current : peak of square wave
Load Current [A]
100
Collector Current, Ic [A]
100s
120 100 80 60 40 20 1 10 100 Frequency [kHz] 1000
Duty cycle : 50% T = 100 C
C o
10
1ms 10 ms
1
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
DC
0.1
0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000
Powe Dissipation = 181W
FGH75N60UF Rev. A1
4
www.fairchildsemi.com
FGH75N60UF 600V, 75A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Gate Resistance
200
Figure 14. Turn-off Characteristics vs. Gate Resistance
10000
Common Emitter VGE = 15V, RG = 5
100
Switching Time [ns]
TC = 25 C
o
Switching Time [ns]
tr
1000
TC = 125 C
o
td(off)
td(on)
Common Emitter VCC = 400V, VGE = 15V IC = 75A TC = 25 C TC = 125 C
o o
100
tf
10 0 10 20 30 40 Gate Resistance, RG [] 50
10 0 10 20 30 40 50
Collector Current, IC [A]
Figure 15. Turn-on Characteristics vs. Collector Current
1000
Common Emitter VGE = 15V, RG = 5 TC = 25 C
o
Figure 16. Turn-off Characteristics vs. Collector Current
1000
tr
td(off)
Switching Time [ns]
Switching Time [ns]
100
TC = 125 C
o
100
tf
td(on)
10
10
Common Emitter VGE = 15V, RG = 5 TC = 25 C TC = 125 C
o o
1 0 30 60 90 120 Collector Current, IC [A] 150
1 0 30 60 90 120 150
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
10
Common Emitter VCC = 400V, VGE = 15V
Figure 18. Switching Loss vs. Collector Current
100
Common Emitter VGE = 15V, RG = 5 TC = 25 C
o o
8
Switching Loss [mJ]
IC = 75A
o
6
TC = 125 C
Eon
Switching Loss [mJ]
TC = 25 C
o
10
TC = 125 C
Eon
4
Eoff
Eoff
1
2
0
0
10
20
30
40
50
0.1
0
30
60
90
120
150
Gate Resistance, RG []
Collector Current, IC [A]
FGH75N60UF Rev. A1
5
www.fairchildsemi.com
FGH75N60UF 600V, 75A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Turn off Switching SOA Characteristics
500
Collector Current, IC [A]
100
10
Safe Operating Area VGE = 15V, TC = 125 C
o
1 1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Figure 20. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.1
0.5 0.2 0.1 0.05
0.01 0.02
0.01 single pulse
PDM t1 t2
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGH75N60UF Rev. A1
6
www.fairchildsemi.com
FGH75N60UF 600V, 75A Field Stop IGBT
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
FGH75N60UF Rev. A1
7
www.fairchildsemi.com
FGH75N60UF 600V, 75A Field Stop IGBT
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or it s global subsid iaries, and is not intended to be an exhaustive list of all such trademarks. The Power Franchise(R) PowerTrench (R) Auto-SPM F-PFS PowerXSTM FRFET(R) Build it Now SM Programmable Active Droop Global Power Resource CorePLUS QFET(R) Green FPS CorePOWER TinyBoost QS Green FPS e-Series CROSSVOLT TinyBuck Quiet Series (R) CTLTM GmaxTM TinyLogic RapidConfigure Current Transfer LogicTM GTO TINYOPTO EcoSPAR K(R) IntelliMAX TinyPower EfficentMaxTM ISOPLANAR TM TinyPWM EZSWITCHTM* MegaBuckTM Saving our world, 1mW/W/k W at a timeTM TinyWire TM* MICROCOUPLER SmartMaxTM TriFault Detect MicroFET SMART START TRUECURR ENT* (R) (R) MicroPak SPM SerDes MillerDriveTM STEALTHTM (R) Fairchild MotionMaxTM SuperFET Fairchild Semiconductor(R) Motion-SPMTM SuperSOT-3 (R) UHC(R) FACT Quiet SeriesTM OPTOLOGIC SuperSOT-6 (R) (R) Ultra FRFET FACT OPTOPLANAR SuperSOT-8 (R) UniFET (R) FAST SupreMOSTM VCX FastvCore SyncFETTM VisualMax FETBench PDP SPMTM Sync-LockTM XSTM (R) FlashWriter(R) * Power-SPM * FPS * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeit ing of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFIN ITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
8
www.fairchildsemi.com
FGH75N60UF Rev. A1

▲Up To Search▲

Price & Availability of FGH75N60UF

	To Download FGH75N60UF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .