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FGH75N60SF 600V, 75A Field Stop IGBT
December 2008
FGH75N60SF
600V, 75A Field Stop IGBT
Features
* High Current Capability * Low Saturation Voltage: VCE(sat) =2.3V @ IC = 75A * High Input Impedance * Fast Switching * RoHS Compliant
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Applications
* Induction Heating, UPS, SMPS, PFC
E
C G
COLLECTOR (FLANGE)
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C
o o
Ratings
600 20 150 75 225 452 181 -55 to +150 -55 to +150 300
Units
V V A A A W W
o o o
C C C
Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
0.276 40
Units
o o
C/W C/W
(c)2008 Fairchild Semiconductor Corporation
1
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FGH75N60SF Rev. A
FGH75N60SF 600V, 75A Field Stop IGBT
Package Marking and Ordering Information
Device Marking
FGH75N60SF
Device
FGH75N60SFTU
Package
TO-247
Packaging Type
Tube
Max Qty Qty per Tube
30ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES TJ ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
600 -
0.4 -
250 400
V V/oC A nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 75A, VGE = 15V IC = 75A, VGE = 15V, TC = 125oC 4.0 5.0 2.3 2.6 6.5 2.9 V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 3850 375 147 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 75A, VGE = 15V VCC = 400V, IC = 75A, RG = 3, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 75A, RG = 3, VGE = 15V, Inductive Load, TC = 25oC 26 58 138 22 2.7 1.0 3.7 25 62 138 21 3.2 1.3 4.5 250 30 130 60 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGH75N60SF Rev. A
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FGH75N60SF 600V, 75A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
225 200
Collector Current, IC [A]
TC = 25 C
o
Figure 2. Typical Output Characteristics
225
TC = 125 C
o
20V 15V 12V 10V
200
Collector Current, IC [A]
20V
15V 12V 10V
175 150 125 100 75 50 25 0 0
175 150 125 100 75 50 25 0
VGE = 8V
VGE = 8V
2 4 6 Collector-Emitter Voltage, VCE [V]
8
0
2 4 6 Collector-Emitter Voltage, VCE [V]
8
Figure 3. Typical Saturation Voltage Characteristics
225 200
Collector Current, IC [A]
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
225 200
Collector Current, IC [A]
Common Emitter VCE = 20V TC = 25 C TC = 125 C
o o
175 150 125 100 75 50 25 0 0
TC = 25 C TC = 125 C
o
o
175 150 125 100 75 50 25
1 2 3 4 5 Collector-Emitter Voltage, VCE [V]
6
0 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
4.0
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
3.5
TC = -40 C
o
150A
16
3.0
75A
12
2.5
IC = 40A
8
150A
2.0
4
75A IC = 40A
1.5 25
50 75 100 125 o Collector-Emitter Case Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGH75N60SF Rev. A
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FGH75N60SF 600V, 75A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
o
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
o
Collector-Emitter Voltage, VCE [V]
TC = 25 C
TC = 125 C
16
16
12
12
8
150A
8
150A 75A IC = 40A
4
75A IC = 40A
4
0
0
20
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
Figure 9. Capacitance Characteristics
7000 6000
Capacitance [pF]
Common Emitter VGE = 0V, f = 1MHz Cies TC = 25 C
o
Figure 10. Gate charge Characteristics
15
Common Emitter
Gate-Emitter Voltage, VGE [V]
TC = 25 C
o
12
VCC = 100V 200V 300V
5000 4000 3000 2000 1000 0 1 10 Collector-Emitter Voltage, VCE [V]
30
Cres Coes
9
6
3
0 0 50 100 150 200 Gate Charge, Qg [nC] 250
Figure 11. SOA Characteristics
500
10s
Figure 12. Load Current vs. Frequency
140
VCC = 400V load Current : peak of square wave
100
Collector Current, Ic [A]
100s
120
Load Current [A]
10
100 80 60 40 20
Duty cycle : 50% T = 100 C
C o
1ms 10 ms
1
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
DC
0.1
0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000
Powe Dissipation = 181W
1
10 100 Frequency [kHz]
1000
FGH75N60SF Rev. A
4
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FGH75N60SF 600V, 75A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Gate Resistance
200
Figure 14. Turn-off Characteristics vs. Gate Resistance
6000
Common Emitter VCC = 400V, VGE = 15V IC = 75A TC = 25 C TC = 125 C
o o
100
Switching Time [ns]
tr
Switching Time [ns]
1000
td(off)
td(on)
Common Emitter VCC = 400V, VGE = 15V IC = 75A TC = 25 C TC = 125 C
o o
100
tf
10 0 10 20 30 40 Gate Resistance, RG [] 50
10 0 10 20 30 Gate Resistance, RG [] 40 50
Figure 15. Turn-on Characteristics vs. Collector Current
200
Common Emitter VGE = 15V, RG = 3 TC = 25 C
o o
Figure 16. Turn-off Characteristics vs. Collector Current
200
td(off)
100
Switching Time [ns]
Switching Time [ns]
TC = 125 C
tr
100
tf
td(on)
Common Emitter VGE = 15V, RG = 3 TC = 25 C TC = 125 C
o o
10 20
40
60
80
100
120
140
160
10 20
40
60
80
100
120
140
160
Collector Current, IC [A]
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
15
Common Emitter VCC = 400V, VGE = 15V IC = 75A
Figure 18. Switching Loss vs. Collector Current
30
Common Emitter VGE = 15V, RG = 3 TC = 25 C TC = 125 C
o o
10
Switching Loss [mJ]
10
Eon
TC = 125 C
o
Switching Loss [mJ]
TC = 25 C
o
Eon
Eoff
Eoff
1
1
0
10
20 30 40 Gate Resistance, RG []
50
0.1 20
40
60 80 100 120 Collector Current, IC [A]
140
160
FGH75N60SF Rev. A
5
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FGH75N60SF 600V, 75A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Turn off Switching SOA Characteristics
300
100
Collector Current, IC [A]
10
Safe Operating Area
1 1
VGE = 15V, TC = 125 C
o
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 20.Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.1
0.5 0.2 0.1 0.05
0.01 0.02
0.01 single pulse
PDM t1 t2
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGH75N60SF Rev. A
6
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FGH75N60SF 600V, 75A Field Stop IGBT
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
FGH75N60SF Rev. A
7
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FGH75N60SF 600V, 75A Field Stop IGBT
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Rev. I37
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FGH75N60SF Rev. A
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