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Photodiode
Preliminary
EPD-280-0-0.3-1
11.04.2007 rev. 02/07 Case TO-46 Type clear UV-glass Technology SiC
Wavelength UV-A - UV-C
Description Highly reliable photodiode with high spectral sensitivity in the UV range (220 nm - 380 nm), mounted in hermetically sealed TO-46 package with clear UV-glass window
Note: housing with diffuse glass window available on request
5,1 -0,1
+0,03
+0,1
O 5,31 O 4,22
O 0,44 -0,03
0,2 -0,025
+0,025
O 4,75 -0,1
2,54
Cathode
O 5,33
+0,05 -0,05
Anode Chip Location 13,4 -1,6
+1,6 +0,075
Applications
0,23
TO-46
Environmental technology, analytical techniques, medical applications, industrial sensors, inspecting and controlling of UV radiation as well as for more general purposes
Miscellaneous Parameters
Tamb = 25 unless otherwise specified C, Parameter Active area Temperature coefficient of IPh Operating temperature range Storage temperature range Acceptance angle at 50% S Test onditions Symbol A TC(IPh) Tamb Tstg Value 0.056 0.1 -40 to +70 -40 to +100 50 Unit mm %/K C C deg.
Optical and Electrical Characteristics
Tamb = 25 unless otherwise specified C, Parameter Breakdown voltage1) Dark current Peak sensitivity wavelength Responsivity at P Sensitivity range at 1% Spectral bandwidth at 50% Shunt resistance Noise equivalent power Specific detectivity Junction capacitance Photo current at = 254 nm1,2)
1) 2)
Test conditions IR = 100 A VR = 1 V VR = 0 V VR = 0 V VR = 0 V VR = 0 V VR = 10 mV = 280 nm = 280 nm VR = 0 V VR = 0 V Ee = 100 W/cm
Symbol VR ID p S min, max 0.5 RSH NEP D* CJ IPh
Min
Typ 20 5 280 0.13
Max
Unit V
100
fA nm A/W
220 80 2 7.6x10 20 3.5
-16
380
nm nm T
W/ Hz
cm Hz W -1
3.1x1013
pF nA
for information only measured with Hg-LP UV-emitter as radiation source
Note: All measurements carried out with EPIGAP equipment
Labeling
Type EPD-280-0-0.3-1
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2
Lot N
RD (typ.) [T ]
Quantity
Photodiode
Preliminary
EPD-280-0-0.3-1
11.04.2007 rev. 02/07
Typical responsivity to incident radiation, normalized to S @ = 280 nm
1,0
Short-circuit current vs. irradiance (typical)
2)
10
3
Responsivity (arb. units)
0,8
0,6
Short-circuit current (nA)
10
2
10
1
0,4
10
0
0,2
10
-1
0,0 200 250 300 350 400
10
-2
10
-2
10
-1
Wavelength [nm]
10 2 Irradiance [mW/cm ]
0
10
1
10
2
Short-circuit current vs. ambient temperature
1,04
Short-circuit current (arb. units)
1,00
0,96
0,92 -40
-20
0
20 40 Ambient temperature [ C]
60
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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