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| PD - 97432 IRLML2030TRPBF VDS VGS Max RDS(on) max (@VGS = 10V) HEXFET(R) Power MOSFET 30 20 100 154 V V m: m: G1 3D S 2 RDS(on) max (@VGS = 4.5V) Micro3TM (SOT-23) IRLML2030TRPBF Application(s) * Load/ System Switch Features and Benefits Features Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1 results in Benefits Multi-vendor compatibility Easier manufacturing Environmentally friendly Increased reliability Absolute Maximum Ratings Symbol VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 30 2.7 2.2 11 1.3 0.8 0.01 20 -55 to + 150 Units V A W W/C V C Thermal Resistance Symbol RJA RJA Parameter Junction-to-Ambient e Typ. --- --- Max. 100 99 Units C/W Junction-to-Ambient (t<10s) f ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 11/4/09 IRLML2030TRPBF Electric Characteristics @ TJ = 25C (unless otherwise specified) Symbol V(BR)DSS Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Units 30 --- --- --- 1.3 --- --- --- --- --- 2.6 --- --- --- --- --- --- --- --- --- --- --- 0.03 123 80 1.7 --- --- --- --- 7.6 --- 1.0 0.34 0.34 4.1 3.3 4.5 2.9 110 29 12 --- --- 154 100 2.3 1 150 100 -100 --- --- --- --- --- --- --- --- --- --- --- --- pF ns nC V Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 2.2A VGS = 10V, ID VDS = VGS, ID = 25A VDS =24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 2.7A ID = 2.7A VDS =15V VGS = 4.5V ID = 1.0A RG = 6.8 VGS = 4.5V VGS = 0V VDS = 15V = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) VGS(th) IDSS IGSS RG gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance V/C Reference to 25C, ID = 1mA m V A nA S d = 2.7A d d VDD =15Vd Source - Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 9.0 0.3 1.6 A 11 1.0 14 0.4 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 2.7A, VGS = 0V TJ = 25C, VR = 15V, IF=2.7A di/dt = 100A/s d d 2 www.irf.com IRLML2030TRPBF 100 ID, Drain-to-Source Current (A) 100 60s PULSE WIDTH Tj = 25C ID, Drain-to-Source Current (A) TOP 10 BOTTOM VGS 10.0V 8.00V 4.50V 3.50V 3.25V 3.00V 2.50V 2.25V 60s PULSE WIDTH Tj = 150C TOP 10 BOTTOM VGS 10.0V 8.00V 4.50V 3.50V 3.25V 3.00V 2.50V 2.25V 1 1 0.1 2.25V 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 2.25V 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current(A) ID = 2.7A VGS = 10V 10 1.5 1 TJ = 150C 0.1 TJ = 25C VDS = 15V 60s PULSE WIDTH 1.0 0.01 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGS, Gate-to-Source Voltage (V) 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML2030TRPBF 1000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12.0 ID= 2.7A VGS, Gate-to-Source Voltage (V) 10.0 8.0 6.0 4.0 2.0 0.0 C, Capacitance (pF) VDS = 24V VDS = 15V 100 Ciss Coss Crss 10 1 10 VDS , Drain-to-Source Voltage (V) 100 0.0 0.5 1.0 1.5 2.0 2.5 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 10 TJ = 150C 1 10 100sec 1 1msec 0 TJ = 25C 0.1 10msec TA = 25C Tj = 150C Single Pulse 0.1 1 10 100 VGS = 0V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 0.01 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLML2030TRPBF 3.0 V DS 2.5 RD VGS RG VGS Pulse Width 1 s Duty Factor 0.1 % ID , Drain Current (A) D.U.T. + 2.0 - VDD 1.5 1.0 Fig 10a. Switching Time Test Circuit 0.5 VDS 0.0 25 50 75 100 125 150 90% TA , Ambient Temperature (C) Fig 9. Maximum Drain Current Vs. Ambient Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1000 Thermal Response ( ZthJA ) 100 D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 0.1 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 0.01 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLML2030TRPBF ( RDS(on), Drain-to -Source On Resistance m) ) RDS(on), Drain-to -Source On Resistance (m 300 260 220 180 140 TJ = 125C 100 60 20 2 4 6 8 10 12 14 16 18 20 TJ = 25C ID = 2.7A 150 Vgs = 4.5V 100 Vgs = 10V 50 0 2 4 6 8 10 12 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Id Vds Vgs L 0 DUT 20K 1K S VCC Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com IRLML2030TRPBF 2.5 VGS(th), Gate threshold Voltage (V) 100 80 2.0 Power (W) 60 1.5 ID = 25uA 1.0 ID = 250uA 40 20 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C ) 0 1E-005 0.0001 0.001 0.01 0.1 1 10 Time (sec) Fig 15. Typical Threshold Voltage Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRLML2030TRPBF Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) 6 D A A2 C DIMENSIONS A 5 SYMBOL MILLIMETERS MIN MAX INCHES MIN MAX 3 6 E1 1 2 E 0.15 [0.006] M C B A 0.10 [0.004] C A1 3X b 0.20 [0.008] M C B A 5 B e e1 NOTES: H4 L1 Recommended Footprint c A A1 A2 b c D E E1 e e1 L L1 L2 0.972 0.950 0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0 1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8 ## 0.0004 # "$ # ! ! " ' ! '" # #& $$ "& 7T8 &$ 7T8A % !# ! REF BSC 0 8 "$ L2 3X L 7 0.802 2.742 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. 1.900 Micro3 (SOT-23/TO-236AB) Part Marking Information Notes : T his part marking information applies to devices produced after 02/26/2001 W = (1-26) IF PRECEDE D BY LAST DIGIT OF CALENDAR YE AR Y = YEAR W = WEEK YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEE K 01 02 03 04 W A B C D PART NUMBE R LOT CODE PART NUMBER CODE REF ERENCE: A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0100 L = IRLML0060 M = IRLML0040 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A LET TER YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEE K 27 28 29 30 W A B C D Note: A line above the work week (as shown here) indicates Lead - Free. 50 51 52 X Y Z Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRLML2030TRPBF Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 1.32 ( .051 ) 1.12 ( .045 ) TR 3.55 ( .139 ) 3.45 ( .136 ) 8.3 ( .326 ) 7.9 ( .312 ) FEED DIRECTION 4.1 ( .161 ) 3.9 ( .154 ) 1.1 ( .043 ) 0.9 ( .036 ) 0.35 ( .013 ) 0.25 ( .010 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9 IRLML2030TRPBF Orderable part number IRLML2030TRPBF Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F Package Type Micro3 Standard Pack Form Quantity Tape and Reel 3000 Note guidelines ) MS L1 Micro3 (per IPC/JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in square Cu board Refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/2009 10 www.irf.com |
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