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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION *With TO-3 package *DARLINGTON *High DC current gain *Complement to type MJ3000/3001 APPLICATIONS *For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION MJ2500/2501 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJ2500 VCBO Collector-base voltage MJ2501 MJ2500 VCEO Collector-emitter voltage MJ2501 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -10 -0.2 150 200 -55~200 V A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJ2500 IC=-0.1A ;IB=0 MJ2501 IC=-5A; IB=-20mA IC=-10A; IB=-50mA IC=-5A ; VCE=-3V MJ2500 ICER Collector cut-off current MJ2501 MJ2500 ICEO Collector cut-off current MJ2501 IEBO hFE Emitter cut-off current DC current gain VCE=-40V; IB=0 VEB=-5V; IC=0 IC=-5A ; VCE=-3V VCE=-60V; RBE=1.0k? TC=150 VCE=-80V; RBE=1.0k? TC=150 VCE=-30V; IB=0 CONDITIONS MJ2500/2501 SYMBOL MIN -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -2.0 -4.0 -3.0 1.0 5.0 1.0 5.0 V V V VCE(sat)-1 VCE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage mA -1.0 mA -2.0 1000 mA THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.17 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJ2500/2501 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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