Part Number Hot Search : 
A2V25 JANTX2N ADM10 ISL7457 ASNXX BC549C HC153 TMA1212D
Product Description
Full Text Search
 

To Download EFA480C-180F Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Excelics
PRELIMINARY DATA SHEET
EFA480C-180F
Low Distortion GaAs Power FET
* * * * * * NON-HERMETIC 180MIL METAL FLANGE PACKAGE +34.0dBm TYPICAL OUTPUT POWER 16.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
All Dimensions In Mils
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=10mA
MIN 32.0 15.0
TYP 34.0 34.0 16.5 11.5 40
MAX
UNIT dBm dB %
800 560
1360 720 -2.0
1760
mA mS
-3.5
V V V
o
Drain Breakdown Voltage Igd=4.8mA Source Breakdown Voltage Igs=4.8mA Thermal Resistance (Au-Sn Eutectic Attach)
-12 -7
-15 -14 12*
C/W
* Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS
Vds
PARAMETERS
Drain-Source Voltage
ABSOLUTE1
12V
CONTINUOUS2
8V
Gate-Source Voltage -8V -4V Vgs Drain Current Idss 1.2A Ids Forward Gate Current 120mA 20mA Igsf Input Power 32dBm @ 3dB Compression Pin Channel Temperature 175oC 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 11.4W 9.5W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA480C-180F
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss Freq GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 S11 Mag 0.954 0.938 0.882 0.861 0.841 0.803 0.764 0.723 0.703 0.713 0.743 0.777 0.821 0.869 0.904 0.917 0.939 0.916 0.913 0.925 S11 Ang -134.7 -164.9 -175.7 171.8 161.2 149.9 135.1 114.4 88.0 58.4 28.7 -1.5 -32.0 -60.0 -82.1 -99.2 -113.8 -128.3 -137.0 -147.2 S21 Mag 9.539 5.226 4.530 3.638 3.202 3.035 3.005 2.994 2.920 2.750 2.518 2.234 1.905 1.512 1.135 0.843 0.658 0.508 0.442 0.391 S21 Ang 102.9 79.0 67.5 53.3 39.7 25.1 7.5 -13.4 -36.5 -60.8 -85.6 -110.9 -137.2 -163.1 174.4 156.8 141.4 126.9 117.1 99.8 S12 Mag 0.018 0.020 0.028 0.032 0.037 0.045 0.055 0.066 0.075 0.080 0.084 0.083 0.074 0.059 0.042 0.032 0.020 0.027 0.041 0.030 S12 Ang 29.3 16.4 17.7 12.1 6.7 0.4 -10.9 -25.3 -43.1 -62.2 -81.5 -102.4 -125.2 -145.1 -159.2 -163.7 -170.7 -130.2 -178.4 150.6 S22 Mag 0.630 0.630 0.516 0.492 0.442 0.379 0.300 0.214 0.130 0.099 0.169 0.270 0.371 0.478 0.583 0.669 0.740 0.759 0.740 0.741 S22 Ang -174.9 179.6 171.1 168.3 166.5 165.5 162.4 155.4 131.4 66.1 14.7 -12.2 -31.6 -53.6 -71.4 -83.3 -89.3 -95.1 -102.2 -118.3


▲Up To Search▲   

 
Price & Availability of EFA480C-180F

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X