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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 High power dissipations APPLICATIONS For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6029 2N6030 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO IN Collector-base voltage PARAMETER CONDITIONS 2N6029 Open emitter 2N6030 VCEO Collector-emitter voltage VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current ANG CH 2N6029 2N6030 EMIC ES Open base Open collector OND TOR UC VALUE -100 -120 -100 -120 -7 -16 -20 -5.0 UNIT V V V A A A W ae ae Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25ae 200 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6029 2N6030 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6029 IC=-0.2A ;IB=0 2N6030 VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current IC=-10A; IB=-1A IC=-16A ;IB=-4A IC=-10A; IB=-1A IC=-8A ; VCE=-2V VCB=ratedVCBO; IE=0 2N6029 VCE=-50V; IB=0 VCE=-60V; IB=0 VCE=ratedVCB -120 -1.0 -2.0 -1.8 -1.5 -1.0 V V V V mA CONDITIONS MIN -100 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage ICEO IN Collector cut-off current 2N6030 ICEV Collector cut-off current (VBE(off)=1.5V) IEBO Emitter cut-off current ANG CH SEM E VEB=-7V; IC=0 VCE=ratedVCB; TC=150ae OND IC 25 TOR UC -1.0 -1.0 -5.0 -1.0 100 80 mA mA mA 2N6029 IC=-8A ; VCE=-2V 2N6030 hFE-1 DC current gain 20 IC=-16A ; VCE=-2V IE=0 ; VCB=-10V ;f=0.1MHz IC=-1A ; VCE=-20V 1.0 4 hFE-2 COB fT DC current gain Output capacitance Transition frequency 1000 pF MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6029 2N6030 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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