View BLS6G2933S-130_4823016.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BLS6G2933S-130
LDMOS S-band radar power transistor
Rev. 01 -- 11 December 2008 Objective data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.9 to 3.3 VDS (V) 32 PL (W) 130 Gp (dB) 12.5 D (%) 47 tr (ns) 20 tf (ns) 6
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 s with of 10 %: N Output power = 130 W N Power gain = 12.5 dB N Efficiency = 47 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2.9 GHz to 3.3 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
1.3 Applications
I S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency range
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Graphic symbol
1
2 3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLS6G2933S-130 Description ceramic earless flanged cavity package; 2 leads Version SOT922-1 Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Min -0.5 -65 Max 60 +13 33 +150 225 Unit V V A C C
5. Thermal characteristics
Table 5. Symbol Zth(j-mb) Thermal characteristics Parameter transient thermal impedance from junction to mounting base Conditions Tcase = 85 C; PL = 130 W tp = 100 s; = 10 % tp = 200 s; = 10 % tp = 300 s; = 10 % tp = 100 s; = 20 % 0.23 K/W 0.28 K/W 0.32 K/W 0.33 K/W Typ Unit
BLS6G2933S-130_1
(c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
2 of 11
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
6. Characteristics
Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 0.6 mA VDS = 10 V; ID = 180 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 9 A VGS = VGS(th) + 3.75 V; ID = 6.3 A Min 60 1.4 27 8.1 Typ 1.8 33 13 0.085 Max 2.4 4.2 450 Unit V V A A nA S
0.135
7. Application information
Table 7. Application information Mode of operation: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production circuit. Symbol PL VCC Gp RLin PL(1dB) D Pdroop(pulse) tr tf Parameter output power supply voltage power gain input return loss output power at 1 dB gain compression drain efficiency pulse droop power rise time fall time PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W Conditions Min Typ 10 40 130 10 140 47 0 20 6 Max Unit 32 0.5 50 50 W V dB dB W % dB ns ns
12.5 -
BLS6G2933S-130_1
(c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
3 of 11
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
Typical impedance ZS 2.2 - j7.6 2.5 - j6.6 3.2 - j5.6 4.5 - j4.8 6.8 - j5.3 ZL 4.5 - j5.6 4.3 - j5.7 4.0 - j5.8 3.6 - j5.8 3.2 - j5.8
Table 8. f GHz 2.9 3.0 3.1 3.2 3.3
drain ZL gate ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS6G2933S-130 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 100 mA; PL = 130 W; tp = 300 s; = 10 %.
BLS6G2933S-130_1
(c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
4 of 11
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
7.2 Graphs
14 Gp (dB) 10
001aaj266
14 Gp (dB) 10
001aaj267
(2) (3) (1)
(2) (3) (1)
6
6
2 0 60 120 PL (W) 180
2 0 60 120 PL (W) 180
VDS = 32 V; IDq = 100 mA; tp = 300 s; = 10 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz
VDS = 32 V; IDq = 100 mA; tp = 100 s; = 20 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz
Fig 2. Power gain as a function of load power; typical values
60 D (%) 40
001aaj268
Fig 3. Power gain as a function of load power; typical values
60 D (%) 40
001aaj269
(1) (2) (3)
(1) (2) (3)
20
20
0 0 60 120 PL (W) 180
0 0 60 120 PL (W) 180
VDS = 32 V; IDq = 100 mA; tp = 300 s; = 10 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz
VDS = 32 V; IDq = 100 mA; tp = 100 s; = 20 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz
Fig 4. Drain efficiency as a function of load power; typical values
Fig 5. Drain efficiency as a function of load power; typical values
BLS6G2933S-130_1
(c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
5 of 11
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
180 PL (W) 120
(2) (3) (1)
001aaj270
180 PL (W) 120
(2) (3) (1)
001aaj271
60
60
0 0 6 12 Pi (W) 18
0 0 6 12 Pi (W) 18
VDS = 32 V; IDq = 100 mA; tp = 300 s; = 10 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz
VDS = 32 V; IDq = 100 mA; tp = 100 s; = 20 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz
Fig 6. Load power as a function of input power; typical values
14 Gp (dB) 12
001aaj272
Fig 7. Load power as a function of input power; typical values
14 Gp (dB) 12 D
001aaj273
60 D (%) 50
60 D (%) 50
Gp D
Gp
10
40
10
40
8
30
8
30
6
20
6
20
4 2850
2950
3050
3150
10 3250 3350 f (MHz)
4 2850
2950
3050
3150
10 3250 3350 f (MHz)
PL = 130 W; VDS = 32 V; IDq = 100 mA; tp = 300 s; = 10 %.
PL = 130 W; VDS = 32 V; IDq = 100 mA; tp = 100 s; = 20 %.
Fig 8. Power gain and drain efficiency as function of frequency; typical values
Fig 9. Power gain and drain efficiency as function of frequency; typical values
BLS6G2933S-130_1
(c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
6 of 11
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
8. Test information
C3 C4
R1
C5
C6
C7
C8
C1
C2
001aaj275
Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with r = 6.15 and thickness = 0.64 mm. See Table 9 for list of components.
Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit Table 9. List of components See Figure 10. Component C1, C2, C5, C7 C3 C4 C6 C8 R1 Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor SMD resistor Value 33 pF 1 F 47 F; 63 V 1 nF 68 F; 63 V 47 Quantity 1 1 1 2 1 1 SMD 0603 ATC 700A or equivalent Remarks ATC 100A or equivalent ATC 900A or equivalent
BLS6G2933S-130_1
(c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
7 of 11
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
9. Package outline
Ceramic earless flanged cavity package; 2 leads SOT922-1
D F A
3
D1
D
U1 L
1
c
H U2
E1
E
2
b
w2
M
D
M
Q
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm inches A 4.22 3.53 b 12.42 12.17 c 0.15 0.10 0.006 0.004 D D1 E 9.53 9.27 E1 9.27 9.02 F 1.32 0.81 H 15.62 14.34 L 3.05 2.03 0.12 0.08 Q 1.70 1.45 U1 17.75 17.50 U2 9.53 9.27 w2 0.25
17.58 17.50 17.22 17.25
0.166 0.489 0.139 0.479
0.692 0.689 0.375 0.365 0.052 0.615 0.678 0.679 0.365 0.355 0.032 0.525 REFERENCES
0.067 0.699 0.375 0.010 0.057 0.689 0.365 EUROPEAN PROJECTION
OUTLINE VERSION SOT922-1
IEC
JEDEC
JEITA
ISSUE DATE 05-11-14 05-11-22
Fig 11. Package outline SOT922-1
BLS6G2933S-130_1 (c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
8 of 11
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
10. Abbreviations
Table 10. Acronym LDMOS LDMOST RF S-band SMD VSWR Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Short wave Band Surface Mounted Device Voltage Standing-Wave Ratio
11. Revision history
Table 11. Revision history Release date 20081211 Data sheet status Objective data sheet Change notice Supersedes Document ID BLS6G2933S-130_1
BLS6G2933S-130_1
(c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
9 of 11
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BLS6G2933S-130_1
(c) NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01 -- 11 December 2008
10 of 11
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2008 Document identifier: BLS6G2933S-130_1

▲Up To Search▲

Price & Availability of BLS6G2933S-130

	To Download BLS6G2933S-130 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .