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| Power Transistors www.jmnic.com 2SA633 Silicon PNP Transistors BCE Features (c)q With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VEBO IB IC PC Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Base collector current Collector current Collector power dissipation Junction temperature Storage temperature 2.0 10 150 -55~+150 RATING 30 30 5.0 UNIT V V V A A W TO-202 Electrical Characteristics Tc=25 SYMBOL ICBO IEBO ICEO VCBO VCEO(SUS) VEBO VCE(sat-1) VCE(sat-2) hFE-1 hFE-2 hFE-3 PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter cut-off current Collector-base breakdown voltage Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Forward current transfer ratio IC=1A; VCE=5V 80 IC=20mA; IB=0 IE=1mA; Ic=0 IC=1.5A; IB=0.15A 30 5 1.0 V V CONDITIONS VCB=30V; IE=0 VEB=5.0V; IC=0 VCE=30V; IB=0 MIN TYPE MAX 100 100 0.5 UNIT uA uA mA |
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