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| Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER 2N5605 VCBO Collector-base voltage 2N5607/5609 2N5611 2N5605 VCEO Collector-emitter voltage 2N5607/5609 2N5611 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 80 100 120 5 5 25 150 -65~150 ae ae V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT ae /W JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5605 VCEO Collector-emitter sustaining voltage 2N5607/5609 2N5611 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5605/5609 hFE DC current gain 2N5607/5611 2N5605/5609 fT Transition frequency 2N5607/5611 2N5605 2N5607 2N5609 2N5611 SYMBOL CONDITIONS MIN 60 TYP. MAX UNIT IC=50mA ;IB=0 80 100 V IC=1A; IB=0.1A IC=2.5A ; VCE=5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO,IB=0 VEB=5V; IC=0 70 IC=2.5A ; VCE=5V 30 70 IC=0.5A ; VCE=10V 60 0.5 1.5 0.1 1.0 0.1 200 90 V V mA mA mA MHz JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2N5605 2N5607 2N5609 2N5611 Fig.2 outline dimensions JMnic |
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