View NTP2955_4809829.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

NTP2955 Power MOSFET
-60 V, -12 A, Single P-Channel, TO-220
Features
* * * *
Low RDS(on) Rugged Performance Fast Switching Pb-Free Package is Available*
http://onsemi.com
V(BR)DSS -60 V RDS(on) Typ 156 mW @ -10 V P-Channel D ID MAX -12 A
Applications
* Industrial * Automotive * Power Supplies
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State Steady State TC = 25C TC = 85C TC = 25C TA = 25C TA = 85C TA = 25C tp = 10 ms PD IDM TJ, TSTG IS EAS PD ID Symbol VDSS VGS ID Value -60 20 -12 -9.0 62.5 -2.4 -1.8 2.4 -42 -55 to 175 -12 216 W A C A mJ W A Unit V V A G
S
MARKING DIAGRAM & PIN ASSIGNMENT
D
NT2955G AYWW 1 2
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = -30 V, VG = -10 V, IPK = -12 A, L = 3.0 mH, RG = 3.0 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
3 1 GDS
TO-220 CASE 221A STYLE 5 A Y WW G
TL
260
C
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Case Junction-to-Ambient - Steady State (Note 1) Symbol RqJC RqJA Max 2.4 62.5 Unit C/W
= Assembly Location = Year = Work Week = Pb-Free Package
ORDERING INFORMATION
Device NTP2955 NTP2955G Package TO-220 TO-220 (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 1 in pad size (Cu. area = 1.127 in sq [1 oz] including traces). *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
March, 2006 - Rev. 2
1
Publication Order Number: NTP2955/D
NTP2955
ELECTRICAL CHARACTERISTICS (TJ=25C unless otherwise stated)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = -48 V TJ = 25C TJ = 125C VGS = 0 V, ID = -250 mA -60 67 -1.0 -10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
VDS = 0 V, VGS = 20 V
VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD td(on) tr td(off) tf VSD tRR ta tb QRR
VGS = VDS, ID = -250 mA
-2.0 56
-4.0
V mV/C
VGS = -10 V, ID = -12 A VDS = -60 V, ID = -12 A
156 6.0
196
mW S
507 VGS = 0 V, f = 1.0 MHz, VDS = -25 V 150 48 14 VGS = -10 V, VDS = -48 V, ID = -12 A 1.6 3.4 6.2
700 250 98
pF
nC 2.5
10 VGS = -10 V, VDD = -30 V, ID = -12 A, RG = 9.1 W 41 27 45
20 80 47 85
ns
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = -12 A TJ = 25C TJ = 125C -1.6 -1.36 53 VGS = 0 V, dIS/dt = 100 A/ms, IS = -12 A 42 12 126 nC ns -2.0 V
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTP2955
25
-ID, DRAIN CURRENT (A) TJ = 25C VGS = -10 V -9.5 V 25 -8.0 V -7.0 V -ID, DRAIN CURRENT (A) 20 15 10 TJ = -55C 5 0 0 VGS = -10 V TJ = 25C TJ = 125C
20 15
-6.0 V
10 . 5 0 0
-4.0 V 2 4 6
-5.5 V -5.0 V -4.5 V 8 10
2
4
6
8
10
-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
-VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.4 VGS = -10 V 0.3 T = 125C 0.2 T = 25C 0.1 T = -55C
0.4
TJ = 25C
0.3
0.2
VGS = -10 V
0.1
VGS = -15 V
0 0 2 4 6 8 10 12 14 -ID, DRAIN CURRENT (A)
0 0 2 4 6 8 10 12 14
-ID, DRAIN CURRENT (A)
Figure 3. On-Resistance versus Drain Current and Temperature
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
Figure 4. On-Resistance versus Drain Current and Gate Voltage
2.5 2.0 1.5 1.0 0.5 0 -50
ID = -12 A VGS = -10 V -IDSS, LEAKAGE (nA)
1000 VGS = 0 V
100 TJ = 125C
10
TJ = 100C
-25
0
25
50
75
100
125
150
175
1
0
10
20
30
40
50
60
TJ, JUNCTION TEMPERATURE (C)
-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage versus Voltage
http://onsemi.com
3
NTP2955
60 50 40 30 VGS 4 2 0 20 10 0 16
-VGS, GATE-TO-SOURCE VOLTAGE (V)
1100 1000 C, CAPACITANCE (pF) 900 800 700 600 500 400 300 200 100 0 -10
CISS
VGS = -0 V
TJ = 25C
TJ = 25C QT VDS QGS QGD
ID = -12 A
10 8 6
CRSS CISS
COSS VDS = -0 V -5 -VGS 0 -VDS 5 CRSS 10 15 20
25
0
4
8
12
QG, TOTAL GATE CHARGE, (nC)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge
14
100
tf td(off)
tr
-IS, SOURCE CURRENT (A)
VDD = -30 V ID = -12 A VGS = -10 V t, TIME (ns)
12 10 8 6 4 2 0 0
VGS = -0 V TJ = 25C
10
td(on)
1
1
10
100
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
RG, GATE RESISTANCE (W)
-VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation versus Gate Resistance
EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 1000 -ID, DRAIN CURRENT (A) VGS = -10 V SINGLE PULSE TJ = 25C 1 ms 10 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1.0 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 250
Figure 10. Diode Forward Voltage versus Current
ID = -12 A 200 150 100 50 0 25
100
100 ms 10 ms
1
dc
0.1 0.1
100
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE (C)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature
http://onsemi.com
4
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
1200
12
NTP2955
PACKAGE DIMENSIONS
TO-220 T SUFFIX PLASTIC PACKAGE CASE 221A-09 ISSUE AA
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
-T- B
4
SEATING PLANE
F
T
C S
Q
123
A U K
H Z L V G D N
R J
STYLE 5: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
http://onsemi.com
5
NTP2955/D

▲Up To Search▲

Price & Availability of NTP2955

	To Download NTP2955 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .