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SEMICONDUCTOR
TECHNICAL SPECIFICATION
RECTRON
SMALL SIGNAL DIODE
VOLTAGE RANGE 75 Volts CURRENT 250 mAmpere
1N4448W
FEATURES
* Fast Switching Speed * Surface Mount Package ldeally Suited for Automatic Insertion * For General Purpose Switching Applicationgs * High Conductance
SOD-123
MECHANICAL DATA
* * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.01 gram
.110(2.800) .102(2.600) .067(1.700) .059(1.500)
.026(.650) .018(.450)
.152(3.850) .140(3.550)
.006(.150)
.003(.080)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
.049(1.250) .041(1.050) .004(.100) .000(0.00)
REF .020(0.500)
Dimensions in inches and (millimeters) MAXIMUM RATINGS (@ TA=25 OC unless otherwise noted) RATINGS Non-Repetitive Peak Reverse Voltage Maximum Repetitive Peak Reverse Voltage Maximum Working Peak reverse Voltage Maximum DC Blocking Voltage Maximum RMS Voltage Maximum Forward Comtinuous Current Maximum Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current Typical Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Maximum Power Dissipation (Note 3) Typical Thermal Resistance Operating and Storage Temperature Range SYMBOL VRM VRRM VRWM VR VRMS IFM IO
@t=1.0uS @t=1.0S
1N4448W 100 75 53 500 250
4.0 2.0
UNITS Volts Volts Volts mAmps mAmps Amps nS pF mW
O
IFSM Trr CJ PD R JA TJ, TSTG
4 4 400 315 -65 to + 150 1N4448W
0.715 0.855 1.0 25 25 2.5
C/W O C
ELECTRICAL CHARACTERISTICS (@TA=25 OC unless otherwise noted) SYMBOL CHARACTERISTICS Maximum Instantaneous Forward Voltage
@IF=1.0mA @IF=10mA @IF=50mA @IF=150mA @VR=20V @VR=75V
UNITS
Volts nAmps uAmps
VF
Maximum Instantaneous Reverse Current
IR
. NOTES : 1. Measured at IF=IR=10mA, IRR=0.1IR And RL=100 . 2. Measured at 1MHz and applied reverse voltage of 0 volts. 3. Part mounted on FR-4 PC board with minimunm recommended pad layout.
2006-3
RATING AND CHARACTERISTICS CURVES ( 1N4448W )
300
Pd, POWER DISSIPATION (mW) IF, FORWARD CURRENT (mA) 100
200
10
Ta=25OC
Ta=50OC
100
1
Ta=85OC
Ta=0OC Ta=30OC
0
0
25
50
0.1
75
100
O
125
150
0
200
400
600
800
1000
TA, AMBIENT TEMPERATURE ( C)
VF, FORWARD VOLTAGE (mV)
FIG.1 Power Derating Curve
10.0
FIG.2 Typical Forward Chatacteristics
2.5 trr, REVERSE RECOVERY TIME(nS)
80
IR, LEAKAGE CURRENT (A)
1.0
Ta=100OC Ta=75OC
2.0 1.5 1.0 0.5 0
0.10
Ta=50OC Ta=25OC
0.01
Ta=-30 C
O
Ta=0 C
O
0.001
0
20
40
60
0
2
4
6
8
10
VR, REVERSE VOLTAGE (V)
IF, FORWARD CURRENT (mA)
FIG.3 Typical Reverse Characteristics
4 CT, TOTAL CAPCITANCE (pF)
f=1 MHz
FIG.4 Reverse Recovery Time vs. Forward Current vs.
3
2
1
0
0
1
2
3
4
5
6
IF, FORWARD CURRENT (mA)
FIG.5 Total Capacicance vs Reverse Voltage vs. s.Reverse
RECTRON

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