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VSK.F180..P Series
Vishay High Power Products
Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A
FEATURES
* Fast turn-off thyristor * Fast recovery diode * High surge capability * Electrically isolated baseplate * 3000 VRMS isolating voltage * Industrial standard package * Lead (Pb)-free
MAGN-A-PAKTM
RoHS
COMPLIANT
* UL E78996 approved
DESCRIPTION PRODUCT SUMMARY
IT(AV) 180 A
These series of MAGN-A-PAKTM modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL IT(AV) IT(RMS) ITSM I2 t I2t tq trr VDRM/VRRM TJ Range 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS VALUES 180 TC 85 400 7130 7470 255 232 2550 20/25 2 Up to 1200 - 40 to 125 kA2s kA2s s V C A UNITS A C
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 08 12 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 800 1200 IRRM/IDRM MAXIMUM AT TJ = 125 C mA 50
VSK.F180-
Document Number: 93685 Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.F180..P Series
Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAKTM Power Modules), 180 A
CURRENT CARRYING CAPABILITY
ITM 180 el 180 el ITM 100 s ITM
FREQUENCY
UNITS
50 Hz 400 Hz 2500 Hz 5000 Hz 10 000 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dl/dt Case temperature Equivalent values for RC circuit
370 435 290 240 170 50
530 650 430 345 270
565 670 490 390 290 50
800 1000 720 540 390
2400 1540 610 390 50
3150 2050 830 540 V A/s 60 10/0.47 C /F A
80 % VDRM 50 85 10/0.47 60 85
80 % VDRM 60 10/0.47 85
80 % VDRM -
ON-STATE CONDUCTION
PARAMETER Maximum average on-state current at case temperature Maximum RMS current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave As AC switch t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value or threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 180 85 400 7130 7470 6000 Sinusoidal half wave, initial TJ = TJ maximum 6280 255 232 180 164 2550 1.30 1.38 0.90 0.71 1.84 600 1000 kA2s V kA2s A UNITS A C
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , Ig = 1A
m V mA
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93685 Revision: 22-Apr-08
VSK.F180..P Series
Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A
SWITCHING
PARAMETER Maximum non-repetitive rate of rise Maximum recovery time Maximum turn-off time SYMBOL dI/dt trr tq TEST CONDITIONS Gate drive 20 V, 20 , tr 1 ms, VD = 80 % VDRM TJ = 25 C ITM = 350 A, dI/dt = - 25 A/s, VR = 50 V, TJ = 25 C ITM = 750 A; TJ = 125 C; dI/dt = - 25 A/s; VR = 50 V; dV/dt = 400 V/s linear to 80 % VDRM 20 VALUES K 800 2 25 s J UNITS A/s
Vishay High Power Products
BLOCKING
PARAMETER Maximum critical rate of rise of off-state voltage RMS insulation voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt VINS IRRM, IDRM TEST CONDITIONS TJ = 125 C, exponential to 67 % VDRM 50 Hz, circuit to base, all terminals shorted, 25 C, 1 s TJ = 125 C, rated VDRM/VRRM applied VALUES 1000 3000 50 UNITS V/s V mA
TRIGGERING
PARAMETER Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Maximum DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM - VGM IGT VGT IGD VGD TEST CONDITIONS f = 50 Hz, d% = 50 TJ = 125 C, f = 50 Hz, d% = 50 TJ = 125 C, tp 5 ms TJ = 25 C, Vak 12 V, Ra = 6 VALUES 60 10 10 5 200 3 20 0.25 UNITS W A V mA V mA V
TJ = 125 C, rated VDRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case per junction Maximuml thermal resistance, case to heatsink per module Mounting torque 10 % MAP to heatsink busbar to MAP SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, flat and greased Amounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is not recommended, busbar should be used and restrained during tightening. Threads must be lubricated with a compound. TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.125 K/W 0.02 4 to 6 (35 to 53) 500 17.8 N*m (lbf * in) g oz. UNITS C
Approximate weight
Document Number: 93685 Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.F180..P Series
Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAKTM Power Modules), 180 A
RthJC CONDUCTION
CONDUCTIONS ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.009 0.010 0.014 0.020 0.032 RECTANGULAR CONDUCTION 0.006 0.011 0.015 0.020 0.033 TJ = 125 C K/W TEST CONDITIONS UNITS
Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
130 M a xim um A llo w a ble C ase Tem pera ture (C ) 120 110 100 90
M axim um Ave rag e O n -state Pow er Lo ss (W )
VSK.F180.. Series R thJC (DC) = 0.125 K/W
350 300 250 200 RM S Lim it 150 100 50 0 0 20 40 60 80 100 120 140 160 180 A ve ra g e O n-sta te C urre n t (A)
C ond uctio n An gle
1 80 1 20 90 60 30
C o n d u ctio n A n g le
30 80 70 60 0 40 80 120 160 200 Averag e O n -state C urren t (A ) 60 90 120 180
VSK.F1 80 .. Series Per Ju n ction T J = 1 25 C
Fig. 1 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
130 M ax im um Allow a ble C ase Tem pera ture (C ) 120 110 100 90 80 70 60 0 50
M axim um Av erag e O n-state Po w e r Loss (W )
VSK.F1 8 0 .. Se ries R thJC (D C ) = 0 .1 2 5 K /W
450 400 350 300 250 200 RM S Lim it 150 100 50 0 0 50 100 150 200 250 300 A verag e O n-sta te C urre n t (A )
C on d u c tio n Pe riod
DC 180 120 90 60 30
C o n d u c tio n Pe rio d
3 0 6 0 9 0 1 2 0 1 80 100 150 200 DC 250 300
VSK.F18 0.. Series Per Junction T J = 12 5 C
Averag e O n-state C urren t (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
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Document Number: 93685 Revision: 22-Apr-08
VSK.F180..P Series
Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A
6500 Pea k Ha lf Sine W a ve O n -state C urren t (A) Transient Therm al Im pedanc e ZthJC (K/W ) 6000 5500 5000 4500 4000 3500 3000 1 10 100
Nu m b er O f E qu a l Am plitu d e Half C yc le C u r re nt Pu lse s (N)
Vishay High Power Products
1
A t A ny Rate d Loa d C o nd itio n A nd W ith Rate d V R RM A p plie d Fo llo w ing Surg e . In itial T J = 125 C @ 60 H z 0.0083 s @ 50 H z 0.0100 s
Ste a dy Sta te V a lue: R thJ C = 0.125 K/W (D C O p eratio n) 0.1
0.01
VSK.F18 0.. S eries Pe r Jun ctio n
VSK.F180 .. Series Per Junctio n
0.001 0.001 0.01 0.1 1 10 100
Sq u are W a ve Pulse D ura tio n (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance ZthJC Characteristics
7500 M axim u m Re verse Rec ove ry C h arg e - Q rr (C ) Pe a k H alf Sin e W av e O n-state C urre n t (A ) 7000 6500 6000 5500 5000 4500 4000 3500 3000
M a xim um No n Rep etitiv e Surg e C urrent Vers us Pulse Tra in D ura tio n . C ontro l O f C o nduction May Not Be Maintained. In itial T J = 125 C N o V o lta g e R e a p p lie d Ra te d VRR M R e a pp lie d
320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 60 70 80 90 100 Ra te O f Fa ll O f Fo rw a rd C urre n t - d i/d t (A/s) VSK.F 180.. Se ries T J = 125 C
I TM = 1000 A 500 A 300 A 200 A 100 A
VSK.F180.. Series Pe r Jun ctio n
0 .1 1
2500 0 .0 1
Pu lse Train D uration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovery Charge Characteristics
10000
M axim um Re verse Rec o very C urre nt - Irr (A)
180 160 140 120 100 80 60 40 20 10 20 30 40 50 60 70 80 90 100 Rate O f Fall O f Fo rw a rd C urren t - d i/dt (A/s) VSK.F180.. Series T J = 125 C
I TM= 1000A 5 00A 3 00A 2 00A 1 00A
Instan ta neous O n -state C urren t (A )
1000 T J = 25 C T J = 12 5 C VSK.F1 80.. Series Per Ju n ctio n 100 1 2 3 4 5 6 7 In sta n ta n e o us O n -sta te V olta g e (V )
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Document Number: 93685 Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.F180..P Series
Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAKTM Power Modules), 180 A
1E4
50 H z
50 H z
150 40 0 1000 2 50 0 5 00 0
P eak On-state C urre nt ( A)
150
1E3
2 50 0 5 00 0
1000
400
1E2
VSK .F180.. Serie s Sinuso id a l p ulse T C = 85 C Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M
tp
1E1 1E1
tp
VSK .F 180.. Series Sinusoid a l pulse T C = 60 C
Snub b e r circ uit R s = 10 ohm s C s = 0.47 F V D = 80% V D RM
1E2
1E3
1E4 1E4
1E1 1E1
1E2
1E3
1E4
Pulse Ba sewid th (s)
Pulse Basewid th (s)
Fig. 11 - Frequency Characteristics
1E4
Pea k On -sta te C urrent (A )
50 H z
1E3
1 00 0 2 50 0 5000
150 40 0 1 00 0 2 50 0
5 00 0
50 H z 150 400
1E2
VSK .F180.. Series Tra p ezo id a l p ulse T C = 8 5 C d i/d t 50A/s Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M VSK .F180.. Series Tra p ezoid a l p ulse T C = 85 C d i/d t 100A/s Snub b er circuit R s = 10 ohm s C s = 0.47 F V D= 80% V D RM
tp 1E1 1E1
tp 1E4 1E4 1E1 E1
1E2
1E3
1E2
1E3
1E4
Pulse Base w id th (s)
Pulse Base w idth (s)
Fig. 12 - Frequency Characteristics
1E4
50 H z
P eak O n -sta te C urren t (A )
1 50
50 H z 150 400 1 00 0 2 50 0 5000
1E3
2 50 0 5 00 0
40 0 1 00 0
1E2
VSK .F1 80.. Se rie s Tra p ezoid a l p ulse T C = 60 C d i/d t 50A/s Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M VSK .F 180.. Series Tra p ezoid a l p ulse T C = 60 C d i/d t 100A/s Snub b e r circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M
tp 1E1 1E1
tp 1E1
1E2
1E3
1E4 1E4
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Ba se w idth (s)
Fig. 13 - Frequency Characteristics
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Document Number: 93685 Revision: 22-Apr-08
VSK.F180..P Series
Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A
1E4
10 jou les p er p u lse 5 2 .5 1 2 .5 1 0 .5 0 .25 0 .1 0 .0 5 5 10 jou les p er p ulse
Vishay High Power Products
P ea k O n -state C urre n t ( A)
0 .5
1E3
0 .1 0 .0 5
0 .2 5
1E2
VSK.F 180.. Series Sinuso id a l p ulse VSK.F180.. Series Tra p ezo id a l p ulse d i/d t 50A /s
tp
1E1 1E1
tp
1E2 1E3 1E4 1E4
1E1 E1
1E2
1E3
1E4
Pulse Base w id th (s)
Pulse Ba se w idth (s)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100 Recta n g u lar g a te p u lse a ) R eco m m en ded lo a d lin e fo r ra ted d i/d t : 1 0V , 1 0o hm s b ) Reco m m en d ed lo a d line fo r <= 3 0% ra ted d i/d t : 1 0V , 20 o h m s 10 (a ) (b )
Tj=25 C Tj=125 C Tj=-40 C
Instantaneo us G ate Voltage (V)
(1) (2) (3) (4)
PG M PG M PG M PG M
= = = =
8W , tp = 25m s 20W , tp = 1m s 40W , tp = 5m s 80W , tp = 2.5m s
1
(1)
(2)
(3)
(4)
VGD IG D 0.1 0 .0 1 0 .1 VSK.F180.. Serie s 1 Instantaneo us G ate C urre nt (A) Fre que ncy Lim ite d by PG (AV) 10 1 00
Fig. 15 - Gate Characteristics
Document Number: 93685 Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.F180..P Series
Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAKTM Power Modules), 180 A
ORDERING INFORMATION TABLE
Device code
VSK
1 1 2 3 4 5 6 7 8 -
T
2
F
3
180
4
-
12
5
H
6
K
7
P
8
Module type Circuit configuration Fast SCR Current rating: IT(AV) x 10 rounded Voltage code x 100 = VRRM (see Voltage Ratings table) dV/dt code: H 400 V/s tq code: K 20 s J 25 s P = Lead (Pb)-free
Note * To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
VSKTF..
~ ~
VSKHF..
~ ~
VSKLF..
~ ~
+
+
+
+
+
+
-
K1 G1 G2 K2
K1 G1
-
-
G2 K2
VSKUF..
+ +
VSKVF..
-
VSKKF..
+ +
VSKNF..
-
-
-
+
+
-
-
+
+
-
K1 G1 G2 K2
+
+
K1 G1 G2 K2
-
G2 K2
+
K1 G1
+
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95086
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Document Number: 93685 Revision: 22-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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